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US 6,534,382 B1Granted
Process for producing semiconductor article
AssigneeCanon Kabushiki Kaisha
InventorsKiyofumi Sakaguchi, Takao Yonehara, Shoji Nishida, Kenji Yamagata
Life of this patent
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Abstract
A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.
Claims8
A method for forming a semiconductor thin film which comprises steps of:
- implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer,
- bonding a film on a surface side of the semiconductor substrate, and
- separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force, and warping the semiconductor substrate or the film bonded on the semiconductor substrate such that a crack forms and extends from a flank side of the semiconductor substrate.
A method for forming a semiconductor thin film which comprises steps of:
- implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer,
- separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force and warping the semiconductor substrate such that crack forms and extends from a flank side of the semiconductor substrate.
Dependencies are inferred from the claim text.