H10P 10/12
Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor
Official title: {Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates (preparing SOI wafers using bonding H10P90/1914)}
H10P10/12 (Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor) appears on 997 US grants and 1,161 published applications in this corpus.
Search patents in H10P- Granted patents
- 997
- Published applications
- 1,161
- Assignees
- 341
- Inventors
- 1,956
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 6 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 9 | 0 |
| 1993 | 6 | 0 |
| 1994 | 6 | 0 |
| 1995 | 9 | 0 |
| 1996 | 3 | 0 |
| 1997 | 6 | 0 |
| 1998 | 5 | 0 |
| 1999 | 12 | 0 |
| 2000 | 19 | 0 |
| 2001 | 18 | 2 |
| 2002 | 13 | 15 |
| 2003 | 15 | 14 |
| 2004 | 8 | 19 |
| 2005 | 12 | 29 |
| 2006 | 16 | 33 |
| 2007 | 21 | 25 |
| 2008 | 23 | 40 |
| 2009 | 16 | 25 |
| 2010 | 21 | 42 |
| 2011 | 34 | 49 |
| 2012 | 29 | 56 |
| 2013 | 29 | 54 |
| 2014 | 59 | 40 |
| 2015 | 50 | 62 |
| 2016 | 47 | 40 |
| 2017 | 51 | 62 |
| 2018 | 49 | 52 |
| 2019 | 48 | 65 |
| 2020 | 53 | 72 |
| 2021 | 63 | 60 |
| 2022 | 38 | 50 |
| 2023 | 41 | 74 |
| 2024 | 49 | 73 |
| 2025 | 47 | 55 |
| 2026 | 28 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Edge structure of semiconductor wafer and manufacturing method thereof29 Sep 2026US 12,751,231 B2United Microelectronics Corp.
- Multi-material chuck8 Sep 2026US 12,733,450 B2Tokyo Electron Limited
- Method for manufacturing deep-junction low-gain avalanche detectors and associated semiconductor substrates25 Aug 2026US 12,720,904 B2Cactus Materials, Inc.
- Strong base-assisted direct bonding method4 Aug 2026US 12,701,973 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Bonding apparatus and bonding method14 Jul 2026US 12,685,039 B2Tokyo Electron Limited
- Bonding apparatus, bonding system, and bonding method8 Oct 2026US 2026/0314302 A1Tokyo Electron Limited
- Substrate production method and substrate production apparatus8 Oct 2026US 2026/0314304 A1Ebara Corporation
- Method for preparing a thin layer of ferroelectric material1 Oct 2026US 2026/0305172 A1
- Apparatus and methods for processing bonding semiconductor wafers1 Oct 2026US 2026/0305197 A1Tokyo Electron Limited
- Adjustable chuck for wafer bonding1 Oct 2026US 2026/0305258 A1Tokyo Electron Limited
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Process of fabricating three-dimensional semiconductor device576US 4,612,083 ANEC Corporation · 1986
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Controlled cleavage process and device for patterned films426US 5,985,742 ASilicon Genesis Corporation · 1999
- Process for producing semiconductor article392US 6,534,382 B1Canon Kabushiki Kaisha · 2003