Edge structure of semiconductor wafer and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsYu-Ping Wang, Chuan-Lan Lin, Chu-Fu Lin, Teng-Chuan Hu, Kun-Ju Li
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Abstract
The invention provide an edge structure of a semiconductor wafer, which comprise a first substrate, an edge region and a device region are defined on that first substrate, a first material layer covers a first surface and a side surface of the edge region, and a second material layer covers the first material layer, the cross-sectional structure of the second material layer gradually decreases from the device region to the edge region.
Claims16
An edge structure of a semiconductor wafer, comprising:
- a first substrate, on which an edge region and a device region are defined;
- a device layer located in the device region on the first substrate;
- a second substrate located on the device layer;
- a first material layer covers a first surface and a side surface of the edge region;
- and
- a second material layer covers the first material layer, wherein the cross-sectional structure of the second material layer gradually decreases from the device region to the edge region, and the second material layer further covers the second substrate of the device region.
A method for manufacturing an edge structure of a semiconductor wafer, comprising:
- providing a first substrate, wherein a device region and an edge region are defined on the first substrate, and the first substrate comprises a first device layer;
- providing a second substrate, wherein the second substrate comprises a second device layer;
- bonding the first device layer with the second device layer face to face;
- performing an edge cutting step on the edge region to remove part of the second substrate and form a first surface in the edge region of the first substrate;
- forming a first material layer and a second material layer on the first surface;
- and
- performing an edge etching step to remove part of the second material layer, wherein after the edge etching step is performed, the cross-sectional structure of the second material layer gradually decreases in a direction from the device region to the edge region.
Dependencies are inferred from the claim text.