H10P 10/126
Characterised by the composition of the bonding layer
Official title: {characterised by the composition of the bonding layer, e.g. dopant concentration or stoichiometry}
H10P10/126 (Characterised by the composition of the bonding layer) appears on 41 US grants and 62 published applications in this corpus.
Search patents in H10P- Granted patents
- 41
- Published applications
- 62
- Assignees
- 39
- Inventors
- 154
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 1 |
| 2008 | 0 | 2 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 2 | 2 |
| 2012 | 1 | 4 |
| 2013 | 2 | 0 |
| 2014 | 2 | 2 |
| 2015 | 4 | 6 |
| 2016 | 0 | 1 |
| 2017 | 4 | 2 |
| 2018 | 2 | 1 |
| 2019 | 0 | 2 |
| 2020 | 3 | 6 |
| 2021 | 2 | 6 |
| 2022 | 2 | 3 |
| 2023 | 6 | 3 |
| 2024 | 3 | 9 |
| 2025 | 3 | 5 |
| 2026 | 2 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Bonded semiconductor device and method for manufacturing bonded semiconductor device26 May 2026US 12,641,924 B2Shin-Etsu Handotai Co., Ltd.
- Method for producing a semiconductor structure comprising an interface region including agglomerates7 Apr 2026US 12,598,923 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Systems and methods for direct bonding in semiconductor die manufacturing21 Oct 2025US 12,451,455 B2Micron Technology, Inc.
- Heterogeneous dielectric bonding scheme15 Jul 2025US 12,362,315 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of fabricating a semiconductor chip having strength adjustment pattern in bonding layer18 Feb 2025US 12,230,603 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing group 3 nitride semiconductor template with improved bonding layer quality27 Aug 2026US 2026/0255934 A1Wavelord Co., Ltd
- Method for producing semiconductor substrate, semiconductor substrate, and semiconductor device20 Aug 2026US 2026/0247893 A1Shin-Etsu Handotai Co., Ltd.
- Method for producing a semiconductor structure comprising an interface region including agglomerates6 Aug 2026US 2026/0231696 A1Commissariat à I' énergie atomique et aux énergies alternatives
- Systems and methods for direct bonding in semiconductor die manufacturing5 Feb 2026US 2026/0040985 A1Micron Technology, Inc.
- Direct diffusion bonding of materials with surface treatment25 Dec 2025US 2025/0389027 A1Diamond Foundry Inc.
Most cited
By later US patents
- Techniques for bonding substrates using an intermediate layer31US 8,796,109 B2Medtronic, Inc. · 2014
- Techniques for bonding substrates using an intermediate layer29US 9,120,287 B2Medtronic, Inc. · 2015
- Isotopically pure silicon-on-insulator wafers and method of making same20US 7,119,400 B2Isonics Corporation · 2006
- Process for manufacturing a multilayer structure made from semiconducting materials16US 7,585,748 B2S. O. I. Tec Silicon on Insulator Technologies · 2009
- Thin epitaxial silicon carbide wafer fabrication8US 9,761,493 B2Rutgers, The State University of New Jersey · 2017