Method for producing a semiconductor structure comprising an interface region including agglomerates

An electronic component produced on and/or in a working layer of a semiconductor structure, wherein the semiconductor structure is produced by a method comprising the following steps:

• a) providing a working layer made of a semiconductor material having a free face to be joined;
• b) providing a carrier substrate made of a semiconductor material having a free face to be joined;
• c) depositing a film composed of a semiconductor material different from that or those of the working layer and of the carrier substrate, having a thickness of less than 50 nm, on the free face to be joined of the working layer and/or on the free face to be joined of the carrier substrate;
• d) forming an intermediate structure, comprising directly joining, along a bonding interface extending along a main plane, the free faces to be joined of the working layer and of the carrier substrate, respectively, the intermediate structure comprising an encapsulated film originating from the one or more film(s) deposited during step c);
• and
• e) annealing the intermediate structure at a temperature higher than or equal to a critical temperature, so as to bring about segmentation of the encapsulated film and form the semiconductor structure comprising an interface region between the working layer and the carrier substrate, the interface region comprising:
• regions of direct contact between the working layer and the carrier substrate, and
• agglomerates comprising the semiconductor material of the film, and having a thickness, along an axis normal to the main plane, of less than or equal to 250 nm;
• the regions of direct contact and the agglomerates being adjacent in the main plan;
• and
• wherein the semiconductor structure comprises:
• the working layer made of a semiconductor material, extending in a main plane;
• and
• the carrier substrate made of a semiconductor material;
• and an interface region between the working layer and the carrier substrate, extending parallel to the main plane, the interface region comprising regions of direct contact between the working layer and the carrier substrate, and agglomerates, comprising a semiconductor material different from that or those of the working layer and of the carrier substrate, and having a thickness, along an axis normal to the main plane, of less than or equal to 250 nm, the regions of direct contact and the agglomerates being adjacent in the main plane.

An electronic component produced on and/or in a working layer of a semiconductor structure, the semiconductor structure comprising:

• a working layer made of a semiconductor material, the working layer extending in a main plane;
• a carrier substrate made of a semiconductor material;
• and
• an interface region between the working layer and the carrier substrate, extending parallel to the main plane, the interface region comprising regions of direct contact between the working layer and the carrier substrate, and agglomerates, comprising a semiconductor material different from that or those of the working layer and of the carrier substrate, and having a thickness, along an axis normal to the main plane, of less than or equal to 250 nm, the regions of direct contact and the agglomerates being adjacent in the main plane.