Heterogeneous dielectric bonding scheme
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Wen-Chih Chiou, Ku-Feng Yang, Ming-Tsu Chung
Life of this patent
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Abstract
A method includes putting a first package component into contact with a second package component. The first package component comprises a first dielectric layer including a first dielectric material, and the first dielectric material is a silicon-oxide-based dielectric material. The second package component includes a second dielectric layer including a second dielectric material different from the first dielectric material. The second dielectric material comprises silicon and an element selected from the group consisting of carbon, nitrogen, and combinations thereof. An annealing process is performed to bond the first dielectric layer to the second dielectric layer.
Claims20
A structure comprising:
- a first package component comprising:
- a first dielectric layer comprising a first silicon-containing dielectric material;
- and
- a second dielectric layer over and contacting the first dielectric layer, wherein the second dielectric layer comprises a second silicon-containing dielectric material different from the first silicon-containing dielectric material;
- and
- a second package component over and joined to the first package component, the second package component comprising:
- a third dielectric layer comprising a third silicon-containing dielectric material same as the first silicon-containing dielectric material and different from the second silicon-containing dielectric material, wherein the third dielectric layer is joined to the second dielectric layer.
A structure comprising:
- a first die comprising:
- a first semiconductor substrate;
- a first integrated circuit at a surface of the first semiconductor substrate;
- a first dielectric layer over the first integrated circuit, wherein the first dielectric layer comprises a first dielectric material;
- and
- a second dielectric layer over and contacting the first dielectric layer, wherein the second dielectric layer comprises a second dielectric material different from the first dielectric material;
- and
- a second die over and bonding to the first die, wherein the second die comprises:
- a second semiconductor substrate;
- a second integrated circuit at a surface of the second semiconductor substrate;
- a third dielectric layer underlying the second integrated circuit, wherein the third dielectric layer comprises a third dielectric material same as the first dielectric material;
- and
- a fourth dielectric layer underlying the third dielectric layer and joined to the second dielectric layer, wherein the fourth dielectric layer comprises a fourth dielectric material different from the second dielectric material.
A structure comprising:
- a first package component comprising:
- a first dielectric layer comprising a first dielectric material;
- a second dielectric layer over and contacting the first dielectric layer, wherein the second dielectric layer comprises a second dielectric material different from the first dielectric material;
- and
- a first conductive feature in the first dielectric layer and the second dielectric layer;
- a second package component comprising:
- a third dielectric layer comprising a third silicon-containing dielectric material same as the first dielectric material and different from the second dielectric material, wherein the third dielectric layer is joined to the second dielectric layer;
- and
- a second conductive feature in the third dielectric layer, wherein the second conductive feature is physically joined to the first conductive feature.
Dependencies are inferred from the claim text.