H10P 10/00
Bonding of wafers, substrates or parts of devices
H10P10/00 (Bonding of wafers, substrates or parts of devices) appears on 1,164 US grants and 1,357 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,164
- Published applications
- 1,357
- Assignees
- 405
- Inventors
- 2,306
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 7 | 0 |
| 1988 | 4 | 0 |
| 1989 | 5 | 0 |
| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 9 | 0 |
| 1993 | 6 | 0 |
| 1994 | 6 | 0 |
| 1995 | 9 | 0 |
| 1996 | 3 | 0 |
| 1997 | 6 | 0 |
| 1998 | 6 | 0 |
| 1999 | 12 | 0 |
| 2000 | 20 | 0 |
| 2001 | 19 | 3 |
| 2002 | 13 | 15 |
| 2003 | 16 | 14 |
| 2004 | 8 | 20 |
| 2005 | 12 | 29 |
| 2006 | 17 | 33 |
| 2007 | 21 | 25 |
| 2008 | 23 | 40 |
| 2009 | 16 | 26 |
| 2010 | 22 | 46 |
| 2011 | 35 | 52 |
| 2012 | 31 | 62 |
| 2013 | 32 | 60 |
| 2014 | 69 | 54 |
| 2015 | 63 | 71 |
| 2016 | 65 | 70 |
| 2017 | 75 | 84 |
| 2018 | 64 | 71 |
| 2019 | 60 | 77 |
| 2020 | 73 | 83 |
| 2021 | 69 | 65 |
| 2022 | 41 | 61 |
| 2023 | 42 | 83 |
| 2024 | 57 | 88 |
| 2025 | 56 | 64 |
| 2026 | 37 | 61 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Edge structure of semiconductor wafer and manufacturing method thereof29 Sep 2026US 12,751,231 B2United Microelectronics Corp.
- Multi-material chuck8 Sep 2026US 12,733,450 B2Tokyo Electron Limited
- Method for manufacturing deep-junction low-gain avalanche detectors and associated semiconductor substrates25 Aug 2026US 12,720,904 B2Cactus Materials, Inc.
- Chip bonding method11 Aug 2026US 12,707,935 B2Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Strong base-assisted direct bonding method4 Aug 2026US 12,701,973 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for manufacturing an electrode structure for an ion trap and method for manufacturing an electrode arrangement for a 3-dimensional ion trap8 Oct 2026US 2026/0314275 A1Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Bonding apparatus, bonding system, and bonding method8 Oct 2026US 2026/0314302 A1Tokyo Electron Limited
- Substrate production method and substrate production apparatus8 Oct 2026US 2026/0314304 A1Ebara Corporation
- Method for preparing a thin layer of ferroelectric material1 Oct 2026US 2026/0305172 A1
- Intermolecular de-bondable wafer bonding for advanced packaging1 Oct 2026US 2026/0305191 A1Micron Technology, Inc.
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Process of fabricating three-dimensional semiconductor device576US 4,612,083 ANEC Corporation · 1986
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride426US 10,340,135 B2ASM IP Holding B. V. · 2019
- Controlled cleavage process and device for patterned films426US 5,985,742 ASilicon Genesis Corporation · 1999