H10P 10/14
Bonding of semiconductor wafers to insulating substrates
Official title: {Bonding of semiconductor wafers to insulating substrates}
H10P10/14 (Bonding of semiconductor wafers to insulating substrates) appears on 21 US grants and 33 published applications in this corpus.
Search patents in H10P- Granted patents
- 21
- Published applications
- 33
- Assignees
- 22
- Inventors
- 59
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2012 | 0 | 2 |
| 2013 | 0 | 0 |
| 2014 | 1 | 2 |
| 2015 | 2 | 2 |
| 2016 | 2 | 1 |
| 2017 | 3 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 4 |
| 2020 | 1 | 0 |
| 2021 | 2 | 3 |
| 2022 | 1 | 4 |
| 2023 | 0 | 2 |
| 2024 | 1 | 5 |
| 2025 | 3 | 2 |
| 2026 | 4 | 5 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing deep-junction low-gain avalanche detectors and associated semiconductor substrates25 Aug 2026US 12,720,904 B2Cactus Materials, Inc.
- Metal oxide semiconductor-based light emitting device19 May 2026US 12,635,296 B2Silanna UV Technologies Pte Ltd
- Metal oxide semiconductor-based light emitting device19 May 2026US 12,635,297 B2Silanna UV Technologies Pte Ltd
- Metal oxide semiconductor-based light emitting device24 Mar 2026US 12,588,321 B2Silanna UV Technologies Pte Ltd
- Metal oxide semiconductor-based light emitting device16 Dec 2025US 12,501,747 B2Silanna UV Technologies Pte Ltd
- Method for manufacturing an electrode structure for an ion trap and method for manufacturing an electrode arrangement for a 3-dimensional ion trap8 Oct 2026US 2026/0314275 A1Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Intermolecular de-bondable wafer bonding for advanced packaging1 Oct 2026US 2026/0305191 A1Micron Technology, Inc.
- Method for manufacturing two substrates called donor pseudo-substrates each comprising at least two tiles on a carrier substrate6 Aug 2026US 2026/0231741 A1
- Methods for Substrate Bonding30 Apr 2026US 2026/0123305 A1APPLIED Materials.Inc.
- Metal oxide semiconductor-based light emitting device1 Jan 2026US 2026/0006950 A1Silanna UV Technologies Pte Ltd
Most cited
By later US patents
- Techniques for bonding substrates using an intermediate layer31US 8,796,109 B2Medtronic, Inc. · 2014
- Techniques for bonding substrates using an intermediate layer29US 9,120,287 B2Medtronic, Inc. · 2015
- Metal oxide semiconductor-based light emitting device12US 11,342,484 B2Silanna UV Technologies Pte Ltd · 2022
- Method for manufacturing composite wafers2US 9,312,166 B2Shin-Etsu Chemical Co., Ltd. · 2016
- Devices formed with techniques for bonding substrates using an intermediate layer2US 9,688,053 B2Medtronic, Inc. · 2017