Metal oxide semiconductor-based light emitting device
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
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Abstract
A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes: a first epitaxial layer including NiO; and a second epitaxial layer including a second epitaxial oxide material. In some cases, the semiconductor structure can include: a first region including p-type conductivity, wherein the first region includes the superlattice; a second region including an epitaxial oxide material; and a third region including an epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction.
Claims22
A semiconductor structure comprising a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
- a first epitaxial layer comprising NiO;
- and
- a second epitaxial layer comprising a second epitaxial oxide material selected from Al2O3, Ga2O3, MgO, LiO2, SiO2, GeO, Er2O3, Gd2O3, PdO, Bi2O3, and IrO2.
A semiconductor structure comprising a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
- a first epitaxial layer comprising NiO;
- and
- a second epitaxial layer comprising a second epitaxial oxide material, wherein the second epitaxial oxide material comprises ZnxGa2(1−x)O3-2x, where 0≤x≤1.
A semiconductor structure comprising a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
- a first epitaxial layer comprising NiO;
- and
- a second epitaxial layer comprising a second epitaxial oxide material, wherein the second epitaxial oxide material comprises (MgxNi1−x)z(AlyGa1−y)2(1−z)O3−2z, where 0≤x≤1, 0≤y≤1, and 0≤z≤1.
A semiconductor structure comprising:
- a first region comprising p-type conductivity, wherein the first region comprises a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
- a first epitaxial layer comprising NiO;
- and
- a second epitaxial layer comprising a second epitaxial oxide material;
- a second region comprising a third epitaxial oxide material;
- and
- a third region comprising n-type conductivity and a fourth epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction,
- wherein the second, third, and fourth epitaxial oxide materials each comprise a material selected from Al2O3, Ga2O3 MgO, LiO2, SiO2, GeO, Er203, Gd2O3, PdO, Bi2O3, and IrO2.
A semiconductor structure comprising:
- a first region comprising p-type conductivity, wherein the first region comprises a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
- a first epitaxial layer comprising NiO;
- and
- a second epitaxial layer comprising a second epitaxial oxide material,
- a second region comprising a third epitaxial oxide material;
- and
- a third region comprising n-type conductivity and a fourth epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction,
- wherein the second, third, and fourth epitaxial oxide materials each comprise ZnxGa2(1−x)O3−2x, where 0≤x≤1.
A semiconductor structure comprising:
- a first region comprising p-type conductivity, wherein the first region comprises a superlattice, wherein the superlattice comprises two or more unit cells, wherein each of the unit cells comprises:
- a first epitaxial layer comprising NiO;
- and
- a second epitaxial layer comprising a second epitaxial oxide material;
- a second region comprising a third epitaxial oxide material;
- and
- a third region comprising n-type conductivity and a fourth epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction,
- wherein the second, third, and fourth epitaxial oxide materials each comprise a composition selected from (MgxNi1x)z(AlyGa1y)2(1z)O3−2z, where 0≤x≤1, 0≤y≤1, and 0≤z≤1.
Dependencies are inferred from the claim text.