Metal oxide semiconductor-based light emitting device

An optoelectronic semiconductor device for generating light of a predetermined wavelength comprising:

• a substrate;
• a first, a second and a third epitaxial oxide layer supported by the substrate, wherein at least one of the first, second and third epitaxial oxide layers comprises (Alx1Ga1−x1)2O3, wherein 0≤x1≤1, wherein the (Alx1Ga1−x1)2O3 comprises a cubic, hexagonal, orthorhombic, trigonal, or rhombic crystal symmetry;
• an optical emission region having an optical emission region band structure configured for generating the light of the predetermined wavelength, the optical emission region comprising the first epitaxial oxide layer supported by the substrate, wherein the first epitaxial oxide layer has an optical emission region band gap energy capable of generating the light of the predetermined wavelength, wherein the first epitaxial oxide layer is of direct bandgap type;
• a first conductivity type region having the second epitaxial oxide layer, the first conductivity type region having a first conductivity type region band structure configured to operate in combination with the optical emission region to generate the light of the predetermined wavelength;
• and
• a second conductivity type region having the third epitaxial oxide layer, the second conductivity type region having a second conductivity type region band structure configured to operate in combination with the optical emission region and the first conductivity type region to generate the light of the predetermined wavelength,
• wherein the optical emission region is between the first conductivity type region and the second conductivity type region,
• wherein the substrate, the first conductivity type region, the second conductivity type region, and the optical emission region are a substantially single crystal epitaxially formed device.