Method for preparing a thin layer of ferroelectric material

A method of preparing a thin single-domain layer of ferroelectric material, the method comprising:

• implanting light species in a first face of a ferroelectric donor substrate to form a weakened plane and to define a first layer between the weakened plane and the first face of the donor substrate;
• assembling the first face of the donor substrate on a support to form an intermediate assembly;
• fracturing the intermediate assembly using a first heat treatment leading to the fracturing of the donor substrate at the weakened plane and to the formation of a free face of the first layer;
• finishing the first layer using an annealing including a second heat treatment and, after the annealing, thinning the first layer to form the thin single-domain layer;
• and
• wherein the method further comprises, between the fracturing of the intermediate assembly and the finishing of the first layer, applying a treatment to the free face to produce a hydrogen concentration that is greater than 2.0E21 at/cm3 in a surface thickness of the first layer.