Process for manufacturing a multilayer structure made from semiconducting materials
AssigneesS.O.I.Tec Silicon on Insulator Technologies, Université Catholique De Louvain
InventorsJean-Pierre Raskin, Dimitri Lederer, François Brunier
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Abstract
The invention relates to a process for manufacturing a multilayer structure made from semiconducting materials that include an active layer, a support layer and an electrically insulating layer between the active layer and the support layer. The process includes the step of modifying the density of carrier traps or the electrical charge within the electrically insulating layer in order to minimize electrical losses in the structure support layer.
Claims20
A process for manufacturing a multilayer structure made of semiconducting materials and comprising an active layer, a support layer and an electrically insulating layer between the active layer and the support layer, which comprises modifying properties of the electrically insulating layer in order to minimize electrical losses in the support layer and enhance signal quality in the active layer.
A process for manufacturing a multilayer structure made of semiconducting materials and comprising an active layer, a support layer and an electrically insulating layer between the active layer and the support layer, which comprises modifying properties of the electrically insulating layer in order to minimize electrical losses in the support layer and enhance signal quality in the active layer, wherein the properties of the electrically insulating layer are modified by inserting an intermediate layer between the electrically insulating layer of the first substrate and the support layer of the second substrate.
A process for manufacturing a multilayer structure made of semiconducting materials and comprising an active layer, a support layer and an electrically insulating layer between the active layer and the support layer, which comprises modifying properties of the electrically insulating layer in order to minimize electrical losses in the support layer and enhance signal quality in the active layer, wherein the structure is formed by bonding a first substrate comprising the active layer with a second substrate comprising the support layer, and wherein the electrical charge within the electrically insulating layer is modified by adjusting parameters of a thermal oxidation that is made on a surface of the first substrate to create the electrically insulating layer thereon.
Dependencies are inferred from the claim text.