Isotopically pure silicon-on-insulator wafers and method of making same
AssigneeIsonics Corporation
InventorStephen J. Burden
Life of this patent
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Abstract
A semiconductor wafer structure having a device layer, an insulating layer, and a substrate which is capable of supporting increased semiconductor device densities or increased semiconductor device power. One or more of the layers includes an isotopically enriched semiconductor material having a higher thermal conductivity than semiconductor material having naturally occurring isotopic ratios. The wafer structure may be formed by various techniques, such as wafer bonding, and deposition techniques.
Claims19
A multi-layer semiconductor wafer structure comprising:
- a substrate;
- an insulating layer on said substrate;
- and
- a top device layer of semiconducting material on said insulating layer, wherein said top device layer comprises multiple layers of semiconductor material selected from the group consisting of silicon enriched to at least 95% of the silicon-28 isotope, germanium enriched to at least 80% of one of the germanium isotopes, silicon-germanium alloys enriched to at least 95% of the silicon-28 isotope, and combinations and alloys thereof,
- and wherein the structure is formed by bonding two wafers together.
A multi-layer semiconductor wafer structure comprising:
- a single crystal silicon substrate;
- a first layer of silicon on the single crystal silicon substrate;
- a second layer, which is electrically insulating on the first layer;
- and
- a top device layer on the second layer, said top device layer comprising a semiconductor material selected from the group consisting of silicon enriched to at least 95% of the silicon-28 isotope, germanium enriched to at least 80% of one of the germanium isotopes, silicon-germanium alloys enriched to at least 95% of the silicon-28 isotope, and combinations and alloys thereof.
A multi-layer semiconductor wafer structure comprising:
- a substrate;
- an insulating layer on said substrate;
- and
- a top device layer of semiconducting material on said insulating layer,
- wherein the semiconductor material layer comprises a semiconductor material selected from the group consisting of germanium enriched to at least 80% of one of the germanium isotopes, silicon-germanium alloys enriched to at least 95% of the silicon-28 isotope, and combinations and alloys thereof.
A multi-layer semiconductor wafer structure comprising:
- a silicon substrate composed of silicon having multiple crystal orientations;
- an insulating layer on said substrate;
- and
- a top device layer of semiconducting material on said insulating layer,
- wherein at least one of the substrate and insulating layer is comprised of isotopically enriched elements of silicon, germanium, or silicon-germanium alloys.
A multi-layer semiconductor wafer structure comprising:
- a single crystal silicon substrate composed of silicon having natural isotopic ratios;
- a first layer on the single crystal silicon substrate composed of at least 99% of the silicon-28 isotope;
- a second layer on the first layer, said second layer being electrically insulating and formed by thermal oxidation of the first silicon-28 isotope layer;
- and
- a top device layer comprising at least one layer of silicon, germanium, or silicon-germanium alloys, all having natural isotopic ratios.
Dependencies are inferred from the claim text.