Bonded semiconductor device and method for manufacturing bonded semiconductor device
AssigneeShin-Etsu Handotai Co., Ltd.
InventorJunya Ishizaki
Life of this patent
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Abstract
A bonded semiconductor device including an epitaxial layer, and a support substrate made of a material different from that of the epitaxial layer and bonded to the epitaxial layer. Any one of the epitaxial layer and the support substrate has a bonding surface with a radial pattern including recesses or protrusions radially spreading from a certain point on the bonding surface as a center.
Claims20
A bonded semiconductor device comprising:
- an epitaxial layer;
- and
- a support substrate made of a material different from that of the epitaxial layer and bonded to the epitaxial layer via a bonding material,
- wherein any one of a bonding surface of the epitaxial layer which is bonded to the support substrate via the bonding material and a bonding surface of the support substrate which is bonded to the epitaxial layer via the bonding material comprises a radial pattern including recesses or protrusions radially spreading from a certain point on the bonding surface as a center.
A method for manufacturing a bonded semiconductor device including an epitaxial layer, and a support substrate made of a material different from that of the epitaxial layer and bonded to the epitaxial layer via a bonding material, the method comprising:
- providing a radial pattern including recesses or protrusions radially spreading from a certain point, as a center, on any one of a bonding surface of the epitaxial layer which is to be bonded to the support substrate and a bonding surface of the support substrate which is to be bonded to the epitaxial layer;
- and
- bonding the epitaxial layer to the support substrate such that the bonding surface of the epitaxial layer faces the bonding surface of the support substrate.
Dependencies are inferred from the claim text.