Bonded substrate, semiconductor device, and method of producing bonded substrate
AssigneeNGK Insulators, Ltd.
InventorsKei SATO, Yoshitaka KURAOKA, Kentaro NONAKA, Shohei OUE
Life of this patent
Estimating the term…
Abstract
A bonded substrate includes: a Group-III element nitride layer; and a support substrate including a support layer. The Group-III element nitride layer has a carbon concentration of 5×1017 atoms/cm3 or more and 2×1019 atoms/cm3 or less.
Claims10
A bonded substrate, comprising:
- a Group-III element nitride layer;
- and
- a support substrate including a support layer,
- wherein the Group-III element nitride layer has a carbon concentration of 5×1017 atoms/cm3 or more and 2×1019 atoms/cm3 or less.
A method of producing a bonded substrate, comprising joining one of a Group-III element nitride layer or a Group-III element nitride substrate having a carbon concentration of 5×1017 atoms/cm3 or more and 2×1019 atoms/cm3 or less and a support substrate including a support layer to each other, wherein a surface of one of the Group-III element nitride layer or the Group-III element nitride substrate on a side to which the support substrate is joined has an arithmetic average roughness Ra of 1.0 nm or less.
A bonded substrate, comprising:
- a Group-III element nitride layer;
- and
- a support substrate including a support layer,
- wherein the Group-III element nitride layer has a carbon concentration of 5×1017 atoms/cm3 or more and 2×1019 atoms/cm3 or less,
- wherein the support layer includes one of gallium nitride, aluminum nitride, silicon carbide, diamond carbon, or diamond,
- wherein the bonded substrate has a disc shape and has a diameter of 4 inches or more, and
- wherein the Group-III element nitride layer and the support layer in the support substrate are directly joined to each other.
Dependencies are inferred from the claim text.