H10N 70/8836
Complex metal oxides
Official title: {Complex metal oxides, e.g. perovskites, spinels}
H10N70/8836 (Complex metal oxides) appears on 1,436 US grants and 1,639 published applications in this corpus.
Search patents in H10N- Granted patents
- 1,436
- Published applications
- 1,639
- Assignees
- 243
- Inventors
- 1,876
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 6 | 10 |
| 2004 | 10 | 28 |
| 2005 | 16 | 33 |
| 2006 | 22 | 37 |
| 2007 | 25 | 46 |
| 2008 | 22 | 53 |
| 2009 | 38 | 76 |
| 2010 | 51 | 87 |
| 2011 | 81 | 97 |
| 2012 | 69 | 75 |
| 2013 | 90 | 106 |
| 2014 | 99 | 118 |
| 2015 | 121 | 110 |
| 2016 | 114 | 99 |
| 2017 | 91 | 85 |
| 2018 | 72 | 78 |
| 2019 | 93 | 114 |
| 2020 | 109 | 116 |
| 2021 | 95 | 91 |
| 2022 | 64 | 53 |
| 2023 | 47 | 46 |
| 2024 | 48 | 27 |
| 2025 | 35 | 26 |
| 2026 | 13 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device, memory integrated circuit and manufacturing method thereof15 Sep 2026US 12,740,339 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for preparing reservoir element25 Aug 2026US 12,721,050 B2Institute of Microelectronics, Chinese Academy of Sciences
- Semiconductor memory device18 Aug 2026US 12,713,841 B2Kioxia Corporation
- Electronic transistors4 Aug 2026US 12,701,930 B2Fundació Institut De Recerca En Energia De Catalunya
- Capacitor and semiconductor device including the capacitor16 Jun 2026US 12,660,214 B2Samsung Electronics Co., Ltd.
- Multi-state memory comprising tunnel junctions with topologically stabilized structures13 Aug 2026US 2026/0239893 A1Centre National De La Recherche Scientifique
- Semiconductor device and method of manufacturing semiconductor device16 Jul 2026US 2026/0206237 A1SK hynix Inc.
- Complex oxide memristive material, memristor comprising such material, and fabrication thereof16 Jul 2026US 2026/0206499 A1
- Memory devices with multiple tracks forming access line and methods for manufacturing the same9 Jul 2026US 2026/0198283 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Resistive memory device including a silicon oxide base spacer and methods for forming the same2 Jul 2026US 2026/0190873 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Bridge resistance random access memory device with a singular contact structure276US 7,608,848 B2Macronix International Co., Ltd. · 2009
- Cross point memory array using multiple thin films260US 6,753,561 B1Unity Semiconductor Corporation · 2004
- Method for switching the properties of perovskite materials used in thin film resistors247US 6,204,139 B1University of Houston · 2001
- Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same235US 7,843,718 B2Samsung Electronics Co., Ltd. · 2010
- Nonvolatile semiconductor memory device and data erase/write method thereof218US 7,742,331 B2Kabushiki Kaisha Toshiba · 2010