H10N 70/801
Constructional details of multistable switching devices
Official title: {Constructional details of multistable switching devices}
H10N70/801 (Constructional details of multistable switching devices) appears on 9,717 US grants and 11,459 published applications in this corpus.
Search patents in H10N- Granted patents
- 9,717
- Published applications
- 11,459
- Assignees
- 847
- Inventors
- 7,717
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 5 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 8 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 13 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 10 | 0 |
| 1999 | 8 | 0 |
| 2000 | 16 | 0 |
| 2001 | 12 | 6 |
| 2002 | 22 | 47 |
| 2003 | 52 | 121 |
| 2004 | 89 | 173 |
| 2005 | 106 | 189 |
| 2006 | 134 | 303 |
| 2007 | 134 | 362 |
| 2008 | 185 | 490 |
| 2009 | 228 | 494 |
| 2010 | 442 | 573 |
| 2011 | 505 | 542 |
| 2012 | 479 | 602 |
| 2013 | 624 | 659 |
| 2014 | 701 | 723 |
| 2015 | 718 | 586 |
| 2016 | 634 | 538 |
| 2017 | 528 | 483 |
| 2018 | 440 | 450 |
| 2019 | 519 | 574 |
| 2020 | 590 | 726 |
| 2021 | 564 | 610 |
| 2022 | 461 | 576 |
| 2023 | 431 | 504 |
| 2024 | 372 | 425 |
| 2025 | 408 | 391 |
| 2026 | 233 | 312 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device including ferroelectric memory cell with doped ferroelectric layer6 Oct 2026US 12,755,782 B2SK Hyinx Inc.
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with phase-change material and method for manufacturing thereof6 Oct 2026US 12,757,644 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- Semiconductor structure containing RRAM and method for preparing same8 Oct 2026US 2026/0313915 A1Shanghai Huali Integrated Circuit Corporation
- Novel pcm device8 Oct 2026US 2026/0314270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314271 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multifunctional low-power optoelectronic memristors device and method of manufacturing thereof8 Oct 2026US 2026/0314273 A1Korea University Research and Business Foundation
- Resistive random-access memory (rram) devices with electrodes containing ruthenium alloys8 Oct 2026US 2026/0314274 A1TetraMem Inc.
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994