Thin-film structure for chalcogenide electrical switching devices and process therefor

A solid state thin-film switching device including a pair of spaced-apart electrodes between which is operatively disposed in electrically communicative relationship, a body of chalcogenide material, said device including:

• a substrate;
• the first electrode on said substrate;
• a relatively thin layer of electrically insulating material on said first electrode;
• an opening in said thin layer of insulating material through which a first surface of a central portion of said body of chalcogenide material electrically communicates with said first electrode, said body covering a portion of the upper periphery of said opening in said thin layer of insulating material;
• the second electrode on a second surface of said body of chalcogenide material;
• said thin layer of insulating material being sufficiently thick to prevent direct conduction of electric current between said first electrode, along the periphery of said body of chalcogenide material, and said second electrode, but not so thick as to cause step coverage problems during the deposition of said body of chalcogenide material;
• and
• a relatively thick layer of electrically insulating material covering at least the periphery of said body of chalcogenide material, said thick layer of insulating material being non-coextensive with said thin layer of insulating material.