H10N 70/881
Switching materials
Official title: {Switching materials}
H10N70/881 (Switching materials) appears on 8,794 US grants and 10,327 published applications in this corpus.
Search patents in H10N- Granted patents
- 8,794
- Published applications
- 10,327
- Assignees
- 793
- Inventors
- 7,144
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 5 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 8 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 13 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 10 | 0 |
| 1999 | 8 | 0 |
| 2000 | 16 | 0 |
| 2001 | 12 | 6 |
| 2002 | 20 | 42 |
| 2003 | 47 | 109 |
| 2004 | 84 | 160 |
| 2005 | 99 | 178 |
| 2006 | 129 | 286 |
| 2007 | 119 | 347 |
| 2008 | 176 | 442 |
| 2009 | 218 | 464 |
| 2010 | 415 | 533 |
| 2011 | 462 | 500 |
| 2012 | 434 | 550 |
| 2013 | 578 | 603 |
| 2014 | 642 | 658 |
| 2015 | 659 | 525 |
| 2016 | 570 | 482 |
| 2017 | 476 | 437 |
| 2018 | 397 | 390 |
| 2019 | 458 | 511 |
| 2020 | 517 | 649 |
| 2021 | 507 | 542 |
| 2022 | 407 | 506 |
| 2023 | 379 | 438 |
| 2024 | 331 | 382 |
| 2025 | 361 | 322 |
| 2026 | 192 | 265 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- Diode device with programmable conducting current and array preparation method thereof29 Sep 2026US 12,751,218 B2Zhejiang University
- Carbon film integrated into a back end of line process15 Sep 2026US 12,740,332 B2Sky Water Technology Foundry, Inc.
- Semiconductor integrated circuit device with first memory cell and third memory cell, and manufacturing method therefor15 Sep 2026US 12,740,333 B2Xiamen Industrial Technology Research Institute Co., Ltd.
- Semiconductor structure containing RRAM and method for preparing same8 Oct 2026US 2026/0313915 A1Shanghai Huali Integrated Circuit Corporation
- Novel pcm device8 Oct 2026US 2026/0314270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multifunctional low-power optoelectronic memristors device and method of manufacturing thereof8 Oct 2026US 2026/0314273 A1Korea University Research and Business Foundation
- Resistive random-access memory (rram) devices with electrodes containing ruthenium alloys8 Oct 2026US 2026/0314274 A1TetraMem Inc.
- Memory device1 Oct 2026US 2026/0301777 A1Kioxia Corporation
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994