Carbon film integrated into a back end of line process

A method of forming an electronic device, the method comprising:

• sputtering a carbon film on a surface above a level of circuitry after forming the circuitry and vias between the surface and the level of circuitry;
• forming a hard mask above the carbon film, including forming an etch stop on the carbon film on which the hard mask is formed;
• etching the carbon film using the hard mask to form a fuse pattern for the carbon film;
• and
• sealing the etched carbon film after forming the etched carbon film as a fuse, wherein forming the etch stop includes depositing a silicon nitride and forming the hard mask includes forming an oxide.

A method of forming an electronic device, the method comprising:

• sputtering a carbon film on a surface above a level of circuitry after forming the circuitry and vias between the surface and the level of circuitry, including sputtering the carbon film on a conductive landing formed on two vias of the vias formed between the surface from the level of circuitry;
• forming a hard mask above the carbon film;
• etching the carbon film using the hard mask to form a fuse pattern for the carbon film;
• and
• sealing the etched carbon film after forming the etched carbon film as a fuse.

A method of forming an electronic device, the method comprising:

• sputtering a carbon film on a surface above a level of circuitry after forming the circuitry and vias between the surface and the level of circuitry;
• forming a hard mask above the carbon film;
• etching the carbon film using the hard mask to form a fuse pattern for the carbon film;
• and
• sealing the etched carbon film after forming the etched carbon film as a fuse, wherein etching the carbon film using the hard mask to form a fuse pattern includes forming a pattern of array of fuses, with each fuse contacting two vias between the surface from the level of circuitry.

A method of forming a write-once-read-many memory device, the method comprising:

• forming circuitry to control an array of memory cells;
• forming access transistors to couple to the circuitry;
• forming access lines to couple between the circuitry and the access transistors forming data lines;
• and
• forming carbon fuses as data storage components of the memory cells, each carbon fuse formed by:
• depositing, by physical vapor deposition, a carbon film on a surface of a layer above a level of the circuitry, access transistors, access lines, and data lines after forming vias between the surface and the level of the circuitry, access transistors, access lines, and data lines;
• forming a hard mask above the carbon film;
• etching the carbon film using the hard mask to form a fuse pattern for the carbon film;
• and
• sealing the etched carbon film after forming the etched carbon film as a fuse.