Diode device with programmable conducting current and array preparation method thereof

A diode device with programmable conducting current, wherein the device comprises:

• a metal structure,
• a resistance variable structure, with a resistance capable of being adjusted, so as to achieve programmable conducting current, and
• a semiconductor structure comprising a semiconductor, wherein a state density function of the semiconductor comprises at least one peak, such that a state density near an energy level of the at least one peak is greater than a state density of an energy level of the semiconductor structure except the peak,
• wherein the metal structure, the resistance variable structure and the semiconductor structure are directly connected in turn,
• wherein semiconductor material of the semiconductor structure comprises Ge, SiGe, GaAs, GaN, SiC, Ga2O3, and the state density function comprises at least one peak located near a forbidden band, and
• wherein when semiconductor material of the semiconductor structure is a semiconductor capable of pinning a Fermi level of a metal directly connected to the semiconductor material to vicinity of a valence band of the semiconductor material without being affected by a work function of the metal directly connected to the semiconductor material, a size of a Schottky barrier at a surface of the semiconductor material mainly depends on properties of the semiconductor material.