H10N 70/882
Compounds of sulfur, selenium or tellurium
Official title: {Compounds of sulfur, selenium or tellurium, e.g. chalcogenides}
H10N70/882 (Compounds of sulfur, selenium or tellurium) appears on 4,799 US grants and 5,638 published applications in this corpus.
Search patents in H10N- Granted patents
- 4,799
- Published applications
- 5,638
- Assignees
- 467
- Inventors
- 3,959
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 5 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 6 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 9 | 0 |
| 1999 | 7 | 0 |
| 2000 | 13 | 0 |
| 2001 | 11 | 5 |
| 2002 | 19 | 39 |
| 2003 | 40 | 97 |
| 2004 | 67 | 128 |
| 2005 | 82 | 133 |
| 2006 | 98 | 217 |
| 2007 | 81 | 264 |
| 2008 | 138 | 335 |
| 2009 | 177 | 317 |
| 2010 | 307 | 338 |
| 2011 | 322 | 248 |
| 2012 | 252 | 274 |
| 2013 | 259 | 261 |
| 2014 | 300 | 277 |
| 2015 | 297 | 228 |
| 2016 | 257 | 233 |
| 2017 | 223 | 192 |
| 2018 | 179 | 179 |
| 2019 | 215 | 250 |
| 2020 | 299 | 372 |
| 2021 | 265 | 274 |
| 2022 | 199 | 262 |
| 2023 | 197 | 221 |
| 2024 | 184 | 218 |
| 2025 | 176 | 159 |
| 2026 | 87 | 117 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- Phase change memory cell sidewall heater15 Sep 2026US 12,740,334 B2International Business Machines Corporation
- Boron surface passivation of phase change memory material15 Sep 2026US 12,740,336 B2International Business Machines Corporation
- Semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,340 B2Samsung Electronics Co., Ltd.
- Memory device1 Oct 2026US 2026/0301777 A1Kioxia Corporation
- Method of forming chalcogenide-based thin film using atomic layer deposition process and method of manufacturing non-volatile memory device using the same1 Oct 2026US 2026/0305184 A1Foundation for Research and Business, Seoul National University of Science and Technology
- Phase change material radio-frequency device and methods for forming the same1 Oct 2026US 2026/0305187 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material switch with improved thermal dissipation and methods for forming the same1 Oct 2026US 2026/0305188 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory cell, semiconductor device including memory cell, and manufacturing method thereof1 Oct 2026US 2026/0305189 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994