H10N 70/8822
Sulfides
Official title: {Sulfides, e.g. CuS}
H10N70/8822 (Sulfides) appears on 583 US grants and 689 published applications in this corpus.
Search patents in H10N- Granted patents
- 583
- Published applications
- 689
- Assignees
- 143
- Inventors
- 896
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 5 |
| 2003 | 2 | 16 |
| 2004 | 8 | 13 |
| 2005 | 12 | 19 |
| 2006 | 16 | 25 |
| 2007 | 14 | 13 |
| 2008 | 10 | 30 |
| 2009 | 15 | 29 |
| 2010 | 26 | 38 |
| 2011 | 27 | 34 |
| 2012 | 30 | 33 |
| 2013 | 38 | 46 |
| 2014 | 43 | 45 |
| 2015 | 50 | 39 |
| 2016 | 51 | 40 |
| 2017 | 42 | 37 |
| 2018 | 31 | 32 |
| 2019 | 31 | 33 |
| 2020 | 39 | 28 |
| 2021 | 15 | 25 |
| 2022 | 20 | 28 |
| 2023 | 15 | 20 |
| 2024 | 14 | 18 |
| 2025 | 16 | 16 |
| 2026 | 9 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Synaptic device, reservoir computing device including the synaptic device, and reservoir computing method using the computing device14 Jul 2026US 12,685,035 B2Korea Advanced Institute of Science and Technology
- Phase-change random access memory device and method of forming the same14 Jul 2026US 12,685,038 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Chalcogenide memory device compositions2 Jun 2026US 12,648,370 B2Micron Technology, Inc.
- Multi-storage element single-transistor crosspoint memory systems at low temperatures21 Apr 2026US 12,610,554 B2Intel Corporation
- Semiconductor memory devices17 Mar 2026US 12,581,660 B2Samsung Electronics Co., Ltd.
- Memory device1 Oct 2026US 2026/0301777 A1Kioxia Corporation
- Phase-change random access memory device and method of forming the same1 Oct 2026US 2026/0305190 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device25 Jun 2026US 2026/0179661 A1Kioxia Corporation
- Method for manufacturing semiconductor memory device including forming conductive line25 Jun 2026US 2026/0181913 A1Samsung Electronics Co., Ltd.
- Semiconductor structure and fabrication method thereof18 Jun 2026US 2026/0173405 A1Peking University
Most cited
By later US patents
- Programmable metallization cell structure and method of making same441US 5,761,115 AArizona Board of Regents · 1998
- Bromine containing silicon precursors for encapsulation layers440US 9,865,815 B2Lam Research Corporation · 2018
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998
- Programmable metallization cell structure and method of making same327US 6,084,796 AArizona Board of Regents · 2000