Synaptic device, reservoir computing device including the synaptic device, and reservoir computing method using the computing device
AssigneesKorea Advanced Institute of Science and Technology, Research & Business Foundation Sungkyunkwan University
InventorsHeejun Yang, Linfeng Sun
Life of this patent
Estimating the term…
Abstract
Disclosed is a synaptic device, a reservoir computing device using the synaptic device, and a reservoir computing method using the reservoir computing device. The synaptic device includes a substrate and a plurality of units cells on the substrate, wherein the unit cells each include a channel layer and a first electrode and second electrode intersecting the channel layer, wherein the first electrode and the second electrode are spaced apart from each other, and define a gap region exposing a portion of the channel layer, and the channel layer includes a 2-dimensional semiconductor material or a 2-dimensional ferroelectric material.
Claims12
A reservoir computing device comprising:
- an input signal generation unit configured to generate an input signal corresponding to a learning target pattern;
- a measurement unit configured to measure a result according to the input signal;
- and
- a learning unit configured to learn the learning target pattern through values measured by the measurement unit,
- wherein the measurement unit comprises:
- a substrate;
- and
- a plurality of unit cells on the substrate,
- wherein the unit cells each comprise a channel layer and a first electrode and second electrode intersecting the channel layer,
- wherein the first electrode and the second electrode are spaced apart from each other, and define a gap region exposing a portion of the channel layer, and
- the channel layer comprises a 2-dimensional semiconductor material or a 2-dimensional ferroelectric material.
A reservoir computing method comprising:
- preparing a learning target pattern;
- representing the learning target pattern by pulse signals;
- inputting each of the pulse signals to a memristor;
- and
- training with the learning target pattern through conductivity values of the memristor,
- wherein the memristor comprises a channel layer and a first electrode and second electrode intersecting the channel layer,
- wherein the first electrode and the second electrode are spaced apart from each other, and define a gap region exposing a portion of the channel layer, and
- the channel layer comprises a 2-dimensional semiconductor material or a 2-dimensional ferroelectric material.
Dependencies are inferred from the claim text.