Chalcogenide memory device compositions
AssigneeMicron Technology, Inc.
InventorsDale W. Collins, Paolo Fantini, Lorenzo Fratin, Enrico Varesi
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Abstract
Methods, systems, and devices for chalcogenide memory device compositions are described. A memory cell may use a chalcogenide material having a composition as described herein as a storage materials, a selector materials, or as a self-selecting storage material. A chalcogenide material as described herein may include a sulfurous component, which may be completely sulfur (S) or may be a combination of sulfur and one or more other elements, such as selenium (Se). In addition to the sulfurous component, the chalcogenide material may further include one or more other elements, such as germanium (Ge), at least one Group-III element, or arsenic (As).
Claims20
A composition of matter, comprising:
- sulfur;
- germanium;
- and
- at least one element selected from a group consisting of boron, aluminum, gallium, indium, and thallium in an amount ranging from 1 atomic percent (at. %) to 15 at. % of the composition.
An apparatus, comprising:
- a memory cell comprising a chalcogenide material, the chalcogenide material comprising:
- sulfur;
- germanium;
- and
- at least one element selected from a group consisting of boron, aluminum, gallium, indium, and thallium in an amount ranging from 1 at. % to 15 at. % of the chalcogenide material.
A method, comprising:
- activating a first access line;
- activating a second access line;
- and
- accessing, based at least in part on activating the first access line and the second access line, a memory cell that includes a chalcogenide material comprising sulfur, germanium, and at least one of boron, aluminum, gallium, indium, or thallium, wherein the at least one of boron, aluminum, gallium, indium, or thallium is in an amount ranging from 1 atomic percent (at. %) to 15 at. % of the chalcogenide material.
Dependencies are inferred from the claim text.