Bromine containing silicon precursors for encapsulation layers
AssigneeLam Research Corporation
InventorDennis M. Hausmann
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Abstract
Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing and/or bromine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing and/or bromine-containing silicon precursors and depositing using a nitrogen-based or hydrogen-based plasma.
Claims19
A method of encapsulating chalcogenide material, the method comprising:
- (a) providing a substrate to a chamber, the substrate comprising one or more exposed layers of the chalcogenide material;
- (b) exposing the substrate to a chlorine-free bromine-containing silicon precursor under conditions allowing the chlorine-free bromine-containing silicon precursor to adsorb onto a surface of the substrate, thereby forming an adsorbed layer of the chlorine-free bromine-containing silicon precursor;
- and
- (c) exposing the substrate to a second reactant to form a silicon nitride film on the chalcogenide material,
- wherein the chlorine-free bromine-containing silicon precursor is selected from the group consisting of compounds having a chemical formula of SixBryIz, where x=1, y is an integer between and including 1 and 4, and y+z=4;
- and compounds having a chemical formula of SixBryIz, where x=2, y is an integer between and including 1 and 6, and y+z=6.
A method of encapsulating chalcogenide material, the method comprising:
- (a) providing a substrate to a chamber, the substrate comprising one or more exposed layers of the chalcogenide material;
- (b) exposing the substrate to a chlorine-free bromine-containing silicon precursor under conditions allowing the chlorine-free bromine-containing silicon precursor to adsorb onto a surface of the substrate, thereby forming an adsorbed layer of the chlorine-free bromine-containing silicon precursor;
- and
- (c) exposing the substrate to a second reactant to form a silicon nitride film on the chalcogenide material,
- wherein the second reactant forms a volatile species when reacted with a material selected from the group consisting of aluminum, iron, copper, antimony, selenium, tellurium, germanium, and arsenic.
A method of encapsulating chalcogenide material, the method comprising:
- (a) providing a substrate to a chamber, the substrate comprising one or more exposed layers of the chalcogenide material;
- (b) exposing the substrate to a chlorine-free bromine-containing silicon precursor under conditions allowing the chlorine-free bromine-containing silicon precursor to adsorb onto a surface of the substrate, thereby forming an adsorbed layer of the chlorine-free bromine-containing silicon precursor;
- and
- (c) exposing the substrate to a second reactant to form a silicon nitride film on the chalcogenide material,
- wherein the second reactant is selected from the group consisting of ammonia and hydrazines, and wherein the silicon nitride film is deposited at a temperature less than about 300° C.
Dependencies are inferred from the claim text.