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US 2026/0305189 A1Published application
Memory cell, semiconductor device including memory cell, and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKai-Tai Chang, Tung-Ying Lee
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Abstract
A semiconductor device includes a first bit line, a memory layer conformally lining the first bit line, a selector layer lining the memory layer, and a word metal layer covering the selector layer. The first bit line includes a first conductive layer and a second conductive layer, and the first conductive layer and the second conductive layer include different electric resistances and different widths.
Claims20
A device, comprising:
- a first bit line comprising a first conductive layer and a second conductive layer, the first conductive layer and the second conductive layer comprising different electric resistances and different widths;
- a memory layer conformally lining the first bit line;
- a selector layer lining the memory layer;
- and
- a word metal layer covering the selector layer.
2 more elements
A method, comprising:
- forming a film stack, wherein the film stack comprises a first conductive material and a second conductive material;
- patterning the film stack to form a patterned film stack, wherein the patterned film stack comprises a first conductive layer and a second conductive layer which comprise different widths;
- conformally forming a memory layer on the patterned film stack;
- forming a selector layer on the memory layer;
- and
- forming a word metal layer on the selector layer.
3 more elements
A method, comprising:
- forming a second conductive material over a first conductive material, wherein the second conductive material is thinner than the first conductive material;
- recessing the first conductive material and the second conductive material to respectively form a first conductive layer and a second conductive layer overlying and laterally protruding from the first conductive layer;
- lining the first conductive layer and the second conductive layer with a memory layer;
- and
- forming a selector layer on the memory layer.
2 more elements
Dependencies are inferred from the claim text.