H10N 70/8828
Tellurides
Official title: {Tellurides, e.g. GeSbTe}
H10N70/8828 (Tellurides) appears on 3,829 US grants and 4,526 published applications in this corpus.
Search patents in H10N- Granted patents
- 3,829
- Published applications
- 4,526
- Assignees
- 398
- Inventors
- 3,296
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 5 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 8 | 0 |
| 1999 | 5 | 0 |
| 2000 | 12 | 0 |
| 2001 | 10 | 4 |
| 2002 | 15 | 31 |
| 2003 | 37 | 69 |
| 2004 | 51 | 89 |
| 2005 | 54 | 108 |
| 2006 | 69 | 161 |
| 2007 | 60 | 225 |
| 2008 | 110 | 295 |
| 2009 | 148 | 283 |
| 2010 | 262 | 289 |
| 2011 | 283 | 209 |
| 2012 | 217 | 240 |
| 2013 | 211 | 211 |
| 2014 | 258 | 232 |
| 2015 | 236 | 172 |
| 2016 | 187 | 156 |
| 2017 | 151 | 141 |
| 2018 | 143 | 143 |
| 2019 | 169 | 195 |
| 2020 | 253 | 306 |
| 2021 | 209 | 221 |
| 2022 | 153 | 190 |
| 2023 | 155 | 167 |
| 2024 | 139 | 176 |
| 2025 | 127 | 127 |
| 2026 | 66 | 86 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Boron surface passivation of phase change memory material15 Sep 2026US 12,740,336 B2International Business Machines Corporation
- Semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,340 B2Samsung Electronics Co., Ltd.
- Structure and fabrication of PCM-based capacitor bank15 Sep 2026US 12,740,343 B2Taiwan Semiconductor Manufacturing Comany, Ltd.
- Hydrogen and hydrocarbon plasma treatment of phase change memory material8 Sep 2026US 12,733,410 B2International Business Machines Corporation
- Memory device1 Oct 2026US 2026/0301777 A1Kioxia Corporation
- Phase change material radio-frequency device and methods for forming the same1 Oct 2026US 2026/0305187 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material switch with improved thermal dissipation and methods for forming the same1 Oct 2026US 2026/0305188 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase-change random access memory device and method of forming the same1 Oct 2026US 2026/0305190 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and fabrication of pcm-based capacitor bank24 Sep 2026US 2026/0293540 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994
- Method of making chalogenide memory device490US 5,789,277 AMicron Technology, Inc. · 1998