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US 5,789,277 AGranted
Method of making chalogenide memory device
AssigneeMicron Technology, Inc.
InventorsRussell C. Zahorik, Alan R. Reinberg
Life of this patent
Estimating the term…
Abstract
A method for fabricating chalcogenide memories in which ultra-small pores are formed in insulative layers using disposable spacers. The chalcogenide memory elements are positioned within the ultra-small pores. The chalcogenide memory elements thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms.
Claims25
A method of fabricating a chalcogenide memory cell, comprising:
- applying a layer of a first material onto a conductive substrate material;
- forming an edge feature in said layer of said first material;
- applying a layer of an insulative material onto said edge feature of said layer of said first material;
- applying a layer of a third material onto said layer of said insulative material;
- removing a portion of said layer of said third material;
- removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material;
- applying a layer of a first conductive material into said pore;
- applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material;
- and
- applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
7 more elements
A method of fabricating a chalcogenide memory cell, comprising:
- applying a layer of a insulative material onto a conductive substrate material;
- applying a layer of a second material onto said layer of said insulative material;
- forming an edge feature in said layer of said second material;
- forming an edge feature in said layer of said insulative material;
- applying a layer of a third material onto said edge features of said layers of said insulative and second materials;
- removing a portion of said layer of said third material;
- removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material;
- applying a layer of a first conductive material into said pore;
- applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material;
- and
- applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
8 more elements
A method of fabricating a chalcogenide memory cell, comprising:
- applying a layer of an insulative material onto a conductive substrate material;
- applying a layer of a second material onto said layer of said insulative material;
- applying a layer of a third material onto said layer of said second material;
- forming an edge feature in said layer of said third material;
- applying a layer of a fourth material onto said edge feature of said layer of said third material;
- removing a portion of said layer of said fourth material;
- removing a portion of said layer of said second material to define a pore in said layer of said second material;
- removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material;
- applying a layer of a first conductive material into said pore;
- applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material;
- and
- applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
9 more elements
A method of fabricating a chalcogenide memory cell, comprising:
- applying a layer of an insulative material onto a conductive substrate material;
- applying a layer of a second material onto said layer of said insulative material;
- forming an edge feature in said layer of said second material;
- applying a layer of a third material onto said edge feature of said layer of said second material;
- removing a portion of said layer of said third material;
- removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material;
- applying a layer of a first conductive material into said pore;
- applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material;
- and
- applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
7 more elements
Dependencies are inferred from the claim text.