Structure and fabrication of PCM-based capacitor bank
AssigneeTaiwan Semiconductor Manufacturing Comany, Ltd.
InventorsKuo-Pin Chang, Yu-Wei Ting, Hung-Ju Li, Kuo-Ching Huang
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AssigneeTaiwan Semiconductor Manufacturing Comany, Ltd.
InventorsKuo-Pin Chang, Yu-Wei Ting, Hung-Ju Li, Kuo-Ching Huang
Estimating the term…
Structures and fabrication methods are disclosed wherein a switch and a capacitor are fabricated sharing the same process flow without the use of an extra mask. A first capacitor electrode is formed in parallel in the same metal layer using the same mask as a component of the PCM switch (e.g., a PCM switch heater electrode). A second capacitor electrode is formed in parallel in the same metal layer using the same mask as another component of the PCM switch (e.g., a PCM switch input pad or a PCM switch heat spreader). The capacitor insulator is formed in parallel in the same layer using the same mask as a PCM switch insulator (e.g., TBR or insulator between heat spreader and PCM layer).
A semiconductor fabrication method for forming elements of a capacitor and a switch in a same material layer, the method comprising:
A semiconductor fabrication method for forming a capacitor and switch in parallel, the method comprising:
A method comprising:
Dependencies are inferred from the claim text.