H10N 70/8825
Selenides
Official title: {Selenides, e.g. GeSe}
H10N70/8825 (Selenides) appears on 1,376 US grants and 1,623 published applications in this corpus.
Search patents in H10N- Granted patents
- 1,376
- Published applications
- 1,623
- Assignees
- 189
- Inventors
- 1,482
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 9 |
| 2003 | 6 | 44 |
| 2004 | 26 | 56 |
| 2005 | 39 | 39 |
| 2006 | 39 | 68 |
| 2007 | 27 | 82 |
| 2008 | 44 | 83 |
| 2009 | 55 | 73 |
| 2010 | 97 | 97 |
| 2011 | 76 | 70 |
| 2012 | 68 | 79 |
| 2013 | 77 | 78 |
| 2014 | 79 | 59 |
| 2015 | 73 | 55 |
| 2016 | 58 | 45 |
| 2017 | 62 | 56 |
| 2018 | 46 | 49 |
| 2019 | 65 | 83 |
| 2020 | 119 | 140 |
| 2021 | 83 | 66 |
| 2022 | 60 | 79 |
| 2023 | 56 | 57 |
| 2024 | 48 | 58 |
| 2025 | 49 | 49 |
| 2026 | 19 | 49 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Boron surface passivation of phase change memory material15 Sep 2026US 12,740,336 B2International Business Machines Corporation
- Synaptic device, reservoir computing device including the synaptic device, and reservoir computing method using the computing device14 Jul 2026US 12,685,035 B2Korea Advanced Institute of Science and Technology
- Phase-change random access memory device and method of forming the same14 Jul 2026US 12,685,038 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Confined phase-change memory cell with self-aligned electrode and reduced thermal loss9 Jun 2026US 12,652,969 B2International Business Machines Corporation
- Variable resistance material and variable resistance memory device including the same2 Jun 2026US 12,648,371 B2Samsung Electronics Co., Ltd.
- Memory device1 Oct 2026US 2026/0301777 A1Kioxia Corporation
- Method of forming chalcogenide-based thin film using atomic layer deposition process and method of manufacturing non-volatile memory device using the same1 Oct 2026US 2026/0305184 A1Foundation for Research and Business, Seoul National University of Science and Technology
- Phase-change random access memory device and method of forming the same1 Oct 2026US 2026/0305190 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Protective sealant for chalcogenide material and methods for forming the same20 Aug 2026US 2026/0247874 A1Micron Technology, Inc.
- Phase Change Material, Phase Change Storage Chip, Storage Device, and Electronic Device30 Jul 2026US 2026/0223605 A1Huawei Technologies Co., Ltd.
Most cited
By later US patents
- Bromine containing silicon precursors for encapsulation layers440US 9,865,815 B2Lam Research Corporation · 2018
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Phase change memory cell and manufacturing method286US 7,688,619 B2Macronix International Co., Ltd. · 2010
- PCRAM cell manufacturing257US 6,348,365 B1Micron Technology, Inc. · 2002