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US 2026/0223605 A1Published application
Phase Change Material, Phase Change Storage Chip, Storage Device, and Electronic Device
AssigneeHuawei Technologies Co., Ltd.
InventorsXiang Li, Xin Chen, Wei Chen, Zhe Yang, Yu Zhang, Hao Tong
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Abstract
A phase change material includes a Ge—Sb—Te phase change base material and a first doping element and a second doping element that are doped into the Ge—Sb—Te phase change base material. The first doping element includes an element Hf, and an atomic percentage of the first doping element is 1.5% to 6.5%. The second doping element includes at least one of an element N, an element C, an element In, and an element Ga, and an atomic percentage of the second doping element is 1.0% to 5%.
Claims20
A phase change material, comprising:
- a germanium-antimony-tellurium (Ge—Sb—Te) phase change base material;
- a first doping element doped into the Ge—Sb—Te phase change base material, wherein the first doping element hafnium (Hf), and wherein a first atomic percentage of the first doping element in the phase change material is 1.5% to 6.5%;
- and
- a second doping element doped into the Ge—Sb—Te phase change base material,
- wherein the second doping element comprises at least one of nitrogen (N), carbon (C), indium (In), or gallium (Ga), and
- wherein a second atomic percentage of the second doping element in the phase change material is 1.0% to 5%.
3 more elements
A phase change material comprising:
- a germanium-antimony tellurium (Ge—Sb—Te) phase change base material;
- a first doping element doped into the Ge—Sb—Te phase change base material, wherein the first doping element comprises hafnium (Hf), and wherein a first atomic percentage of the first doping element in the phase change material is 1.5% to 7%;
- and
- a second doping element doped into the Ge—Sb—Te phase change base material,
- wherein the second doping element comprises at least one of nitrogen (N), carbon (C), indium (In), or gallium (Ga),
- wherein a second atomic percentage of the second doping element in the phase change material is 1.0% to 7%, and
- wherein a sum of the first atomic percentage and the second atomic percentage is greater than 4% and less than 10%.
4 more elements
A phase change storage chip, comprising:
- a plurality of phase change storages, wherein each of the phase change storages comprises a phase change material layer, and wherein the phase change material layer comprises:
- a germanium antimony-tellurium (Ge—Sb—Te) phase change base material;
- a first doping element doped into the Ge—Sb—Te phase change base material, wherein the first doping element comprises hafnium (Hf);
- and
- a second doping element doped into the Ge—Sb—Te phase change base material, wherein the second doping element comprises at least one of nitrogen (N), carbon (C), indium (In), or gallium (Ga),
- wherein a first atomic percentage of the first doping element is 1.5% to 6.5% and a second atomic percentage of the second doping element is 1.0% to 5%, or
- wherein the first atomic percentage is 1.5% to 7%, the second atomic percentage is 1.0% to 7%, and a sum of the first atomic percentage and the second atomic percentage is greater than 4% and less than 10%.
4 more elements
A storage device, comprising:
- at least one phase change storage chip comprising a plurality of phase change storage, wherein each of the phase change storages comprises a phase change material layer, and wherein the phase change material layer comprises:
- a germanium-antimony-tellurium (Ge—Sb—Te) phase change base material;
- a first doping element doped into the Ge—Sb—Te phase change base material, wherein the first doping element comprises Hf;
- and
- a second doping element doped into the Ge—Sb—Te phase change base material, wherein the second doping element comprises at least one of nitrogen (N), carbon (C), indium (In), or gallium (Ga),
- wherein:
- a first atomic percentage of the first doping element is 1.5% to 6.5% and a second atomic percentage of the second doping element is 1.0% to 5%, or
- wherein the first atomic percentage is 1.5% to 7%, the second atomic percentage is 1.0% to 7%, and a sum of the first atomic percentage and the second atomic percentage is greater than 4% and less than 10%.
5 more elements
Dependencies are inferred from the claim text.