Variable resistance material and variable resistance memory device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSukhwan Chung, Zhe Wu, Jung Moo Lee, Hideki Horii
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Abstract
A variable resistance memory device includes a first electrode; a variable resistance material on the first electrode; and a second electrode on the variable resistance material, wherein the variable resistance material includes an impurity (A) and is represented as ApGexSbyTez, an atomic concentration ‘x’ of the germanium is 0.4≤x≤0.5, an atomic concentration ‘z’ of the tellurium is 0.3≤z<0.6, an atomic concentration ‘p’ of the impurity is 0<p≤0.1, and an atomic concentration ‘y’ of the antimony is 1−x−z−p and is greater than 0.
Claims20
A variable resistance memory device, comprising:
- a first electrode;
- a variable resistance material on the first electrode;
- and
- a second electrode on the variable resistance material,
- wherein:
- the variable resistance material includes germanium (Ge), antimony (Sb), tellurium (Te), and at least one impurity (A) and is represented as ApGexSbyTez,
- an atomic concentration ‘x’ of the germanium is 0.4≤x≤0.5,
- an atomic concentration ‘z’ of the tellurium is 0.3≤z≤0.6,
- an atomic concentration ‘p’ of the impurity is 0<p≤0.1, and
- an atomic concentration ‘y’ of the antimony is 1−x−z−p and is greater than 0.
A variable resistance material comprising:
- germanium (Ge);
- antimony (Sb);
- tellurium (Te);
- and
- at least one impurity (A),
- wherein:
- the variable resistance material is represented as ApGexSbyTez,
- an atomic concentration ‘x’ of the germanium is 0.4≤x≤0.5,
- an atomic concentration ‘z’ of the tellurium is 0.3≤z<0.6,
- an atomic concentration ‘p’ of the impurity (A) is 0<p≤0.1, and
- an atomic concentration ‘y’ of the antimony is 1−x−z−p and is greater than 0.
Dependencies are inferred from the claim text.