PCRAM cell manufacturing

A method of forming a programmable cell comprising the steps of:

• forming an opening having a depth, in a dielectric material to expose a portion of an underlying first conductive electrode;
• forming a glass material in said opening, said glass material being recessed approximately 50% or less said depth of said opening;
• forming a metal material on said glass material within said opening;
• diffusing metal ions from said metal material into said material;
• and
• forming a second conductive electrode overlying said dielectric material and said metal material.

A method of forming a programmable capacitor dynamic random access memory comprising the steps of:

• forming a first conductive electrode on a substrate surface;
• forming a dielectric material on said first conductive electrode;
• forming an opening having a depth, in said dielectric material to expose a portion of said first conductive electrode;
• forming a glass material in said opening, said glass material being recessed approximately 50% or less said depth of said opening;
• forming a metal material on said glass material within said opening;
• diffusing metal ions from said metal material into said glass material;
• and
• forming a second conductive electrode overlying said dielectric material and said metal material.

A method of forming a programmable capacitor dynamic random access memory comprising the steps of:

• forming a first conductive electrode on a substrate surface;
• forming a dielectric material on said first conductive electrode;
• forming an opening having a depth, in said dielectric material to expose a portion of said first conductive electrode;
• forming a glass material recessed by approximately 50% or less said depth of said opening;
• forming a metal material on said glass material within said opening;
• diffusing metal ions from said metal material into said glass material;
• and
• forming a second conductive electrode overlying said dielectric material and said metal material.

A method of forming a programmable capacitor dynamic random access memory comprising the steps of:

• forming a first conductive electrode on a substrate surface;
• forming a dielectric material on said first conductive electrode;
• forming an opening having a depth, in said dielectric material to expose a portion of said first conductive electrode;
• forming a glass material recessed by approximately 50% or less said depth of said opening;
• forming a silver based material on said glass material within said opening;
• diffusing silver ions from said silver based material into said glass material such that a resultant silver ion concentration in said glass material is approximately 27%±10%;
• and
• forming a second conductive electrode overlying said dielectric material and said metal material.