Confined phase-change memory cell with self-aligned electrode and reduced thermal loss
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li, Julien Frougier, Ruilong Xie
Life of this patent
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Abstract
A confined phase-change memory cell with self-aligned electrode includes a first conductive structure within a first dielectric layer. A phase-change memory pillar including a first portion of a phase-change material is confined within a second dielectric layer and electrically connected to the first conductive structure. A second conductive structure within a third dielectric layer is surrounded by a second portion of the phase-change material for electrically connecting the second conductive structure to the phase-change memory pillar and reducing heat loss.
Claims19
A memory device, comprising:
- a first conductive structure within a first dielectric layer;
- a phase-change memory pillar including a first portion of a phase-change material confined within a second dielectric layer, the phase-change memory pillar being electrically connected to the first conductive structure;
- a second conductive structure within a third dielectric layer, wherein a second portion of the phase-change material surrounds the second conductive structure and electrically connects the second conductive structure to the phase-change memory pillar;
- and
- a phase-change material shell surrounding the second conductive structure and formed around the first conductive structure to cover a top surface and opposite sidewalls of the first conductive structure, wherein a thickness of the phase-change material is less than half a distance between opposite sidewalls of the third dielectric layer and greater than half a distance between opposite sidewalls of the second dielectric layer.
A memory device, comprising:
- a first dielectric layer;
- a second dielectric layer deposited above the first dielectric layer;
- a third dielectric layer deposited above the second dielectric layer;
- a phase change memory comprising a phase-change material that has at least a phase-change material shell above a phase-change memory pillar, wherein a thickness of the phase-change material is less than half a distance between opposite sidewalls of the third dielectric layer and greater than half a distance between opposite sidewalls of the second dielectric layer;
- and
- a top electrode surrounded by the phase-change material shell, wherein respective top surfaces of the phase-change material shell and the top electrode are substantially coplanar.
A memory device, comprising:
- a first dielectric layer;
- a second dielectric layer deposited above the first dielectric layer;
- a third dielectric layer deposited above the second dielectric layer;
- a phase-change material comprising a central pillar portion, an upper shell portion associated with a top of the central pillar portion, and a lower shell portion associated with a bottom of the central pillar portion, wherein a thickness of the phase-change material is less than half a distance between opposite sidewalls of the third dielectric layer and greater than half a distance between opposite sidewalls of the second dielectric layer;
- a top electrode surrounded by the upper shell portion, wherein respective top surfaces of the upper shell portion and the top electrode are substantially coplanar;
- and
- a bottom electrode surrounded by the lower shell portion, wherein respective bottom surfaces of the lower shell portion and the bottom electrode are substantially coplanar.
Dependencies are inferred from the claim text.