Novel pcm device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChang-Chih Huang, Han-Yu Chen, Yu-Sheng Chen, Kuo-Chyuan Tzeng
Life of this patent
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Abstract
In various embodiments, an improved structure for a PCM device is provided. The improved structure is configured to help prevent heat dissipation. In one example, the PCM device is a PCM RF Switch, which has a substrate, a heater, a dielectric/insulator layer, oxidation layers, electrodes, a PCM region, and/or any other components. The oxidation layers are configured to help prevent heat dissipation from the heater.
Claims20
A method of fabricating a phase change material (PCM) radio frequency (RF) switch, the method comprising:
- forming a heater element above a substrate;
- forming a dielectric layer on the heater element;
- forming oxidation layers on the substrate laterally surrounding the heater element and the dielectric layer;
- forming a PCM region over the dielectric layer;
- forming dielectric spacers on the oxidation layers and along vertical sidewalls of the PCM region;
- and
- forming electrodes around the PCM region and over the dielectric spacers on the oxidation layers.
A method of fabricating a phase change material (PCM) device, the method comprising:
- forming a heater element above a substrate;
- forming a dielectric layer on the heater element;
- forming oxidation layers on the substrate and around the heater element and the dielectric layer, wherein upper surfaces of the oxidation layers are co-planar with an upper surface of the dielectric layer;
- forming a PCM region on the dielectric layer, wherein the PCM region is wider than the heater element;
- forming spacers on the oxidation layers and along vertical sidewalls of the PCM region;
- and
- forming electrodes around the PCM region and over the spacers, wherein the electrodes and the PCM region define a radio frequency path.
A method of fabricating a coplanar heater-substrate phase change material (PCM) device, the method comprising:
- forming a heater element on a substrate, wherein a lower surface of the heater element is co-planar with an upper surface of the substrate;
- forming a dielectric layer on the heater element;
- forming at least one oxidation layer on the substrate and around the heater element and the dielectric layer, wherein upper surfaces of the at least one oxidation layer are co-planar with an upper surface of the dielectric layer;
- forming a PCM region on the dielectric layer;
- and
- forming spacers on the at least one oxidation layer and along vertical sidewalls of the PCM region.
Dependencies are inferred from the claim text.