Multifunctional low-power optoelectronic memristors device and method of manufacturing thereof
AssigneeKorea University Research and Business Foundation
InventorsJae Won SHIM, Min Jong LEE
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Abstract
A multifunctional low-power optoelectronic memristor device is disclosed. The multifunctional low-power optoelectronic memristor device includes: a bottom electrode layer; an intermediate layer formed on the bottom electrode layer and including titanium dioxide (TiO2); a resistive switching layer formed on the intermediate layer and configured to switch a resistance state; an upper protective layer formed on the resistive switching layer; and a top electrode layer formed on the upper protective layer, wherein the resistive switching layer is a halide perovskite material layer.
Claims9
A multifunctional low-power optoelectronic memristor device comprising:
- a bottom electrode layer;
- an intermediate layer formed on the bottom electrode layer and including titanium dioxide (TiO2);
- a resistive switching layer formed on the intermediate layer and configured to switch a resistance state;
- an upper protective layer formed on the resistive switching layer;
- and
- a top electrode layer formed on the upper protective layer,
- wherein the resistive switching layer is a halide perovskite material layer.
A method of manufacturing a multifunctional low-power optoelectronic memristor device, the method comprising:
- coating a bottom electrode;
- depositing a titanium dioxide (TiO2) thin film having a thickness of 5 nm on the bottom electrode by atomic layer deposition;
- forming a resistive switching layer on the titanium dioxide (TiO2) thin film using a polytetrafluoroethylene (PTFE) filter;
- forming an upper protective layer on the resistive switching layer;
- and
- depositing a silver top electrode to a thickness of 100 nm at a pressure of 10−7 hPa using a thermal evaporator.
Dependencies are inferred from the claim text.