H10N 70/884
Based on at least one element of group iiia, iva or va
Official title: {based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883)}
H10N70/884 (Based on at least one element of group iiia, iva or va) appears on 1,240 US grants and 1,400 published applications in this corpus.
Search patents in H10N- Granted patents
- 1,240
- Published applications
- 1,400
- Assignees
- 197
- Inventors
- 1,496
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 3 | 10 |
| 2004 | 7 | 11 |
| 2005 | 7 | 11 |
| 2006 | 9 | 33 |
| 2007 | 9 | 78 |
| 2008 | 30 | 103 |
| 2009 | 47 | 131 |
| 2010 | 110 | 116 |
| 2011 | 113 | 108 |
| 2012 | 94 | 103 |
| 2013 | 103 | 95 |
| 2014 | 119 | 110 |
| 2015 | 113 | 82 |
| 2016 | 84 | 52 |
| 2017 | 68 | 44 |
| 2018 | 39 | 31 |
| 2019 | 52 | 54 |
| 2020 | 44 | 52 |
| 2021 | 48 | 48 |
| 2022 | 38 | 43 |
| 2023 | 39 | 35 |
| 2024 | 22 | 17 |
| 2025 | 20 | 20 |
| 2026 | 13 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Carbon film integrated into a back end of line process15 Sep 2026US 12,740,332 B2Sky Water Technology Foundry, Inc.
- Methods of forming electronic devices comprising metal oxide materials25 Aug 2026US 12,721,054 B2Micron Technology, Inc.
- Semiconductor memory device18 Aug 2026US 12,713,841 B2Kioxia Corporation
- Pyroelectric device for a semiconductor device4 Aug 2026US 12,701,917 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change heterostructure, and phase change memory device including the same21 Jul 2026US 12,690,396 B2Samsung Electronics Co., Ltd.
- Dual-dimensional memory junction device and preparation method, performance acquisition method, and application method for dual-dimensional memory junction device27 Aug 2026US 2026/0255886 A1Huazhong University of Science and Technology
- Phase Change Material, Phase Change Storage Chip, Storage Device, and Electronic Device30 Jul 2026US 2026/0223605 A1Huawei Technologies Co., Ltd.
- Semiconductor structure and fabrication method thereof18 Jun 2026US 2026/0173405 A1Peking University
- Semiconductor device and method for fabricating the same11 Jun 2026US 2026/0165039 A1SK hynix Inc.
- Semiconductor device and method for fabricating the same4 Jun 2026US 2026/0157120 A1SK hynix Inc.
Most cited
By later US patents
- Programmable cell for use in programmable electronic arrays477US 4,499,557 AEnergy Conversion Devices, Inc. · 1985
- Programmable cell for use in programmable electronic arrays343US 4,599,705 AEnergy Conversion Devices, Inc. · 1986
- Amorphous silicon memory300US 5,360,981 ABritish Telecommunications Public Ltd.Co. · 1994
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Phase change memory cell and manufacturing method286US 7,688,619 B2Macronix International Co., Ltd. · 2010