Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsJeong Myeong KIM, Cha Deok DONG, Keo Rock CHOI
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Abstract
Disclosed are a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a plurality of memory cells. Each of the memory cells includes a memory layer; and a selector layer disposed over or below the memory layer, and configured to select the memory layer, the selector layer including an amorphous silicon layer which contains, as a dopant, a Group-14 element of a periodic table.
Claims22
A semiconductor device comprising a plurality of memory cells,
- wherein each of the memory cells includes:
- a memory layer;
- and
- a selector layer configured to select the memory layer, the selector layer including an amorphous silicon layer which contains, as a dopant, a Group-14 element of a periodic table.
A method for fabricating a semiconductor device with a selector layer included in each of a plurality of arrayed memory cells to control electrical access to a corresponding memory cell, the method comprising:
- forming an amorphous silicon layer as the selector layer over a substrate, the amorphous silicon layer containing, as a first dopant, a Group-14 element of a periodic table;
- and
- performing an annealing process at a temperature lower than a temperature of crystallization of the amorphous silicon layer.
Dependencies are inferred from the claim text.