H10N 70/8845
Carbon or carbides
Official title: {Carbon or carbides}
H10N70/8845 (Carbon or carbides) appears on 361 US grants and 421 published applications in this corpus.
Search patents in H10N- Granted patents
- 361
- Published applications
- 421
- Assignees
- 94
- Inventors
- 556
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 6 |
| 2007 | 2 | 2 |
| 2008 | 2 | 10 |
| 2009 | 5 | 24 |
| 2010 | 16 | 47 |
| 2011 | 24 | 46 |
| 2012 | 24 | 29 |
| 2013 | 46 | 29 |
| 2014 | 43 | 41 |
| 2015 | 36 | 28 |
| 2016 | 32 | 22 |
| 2017 | 22 | 19 |
| 2018 | 9 | 12 |
| 2019 | 18 | 15 |
| 2020 | 18 | 16 |
| 2021 | 13 | 17 |
| 2022 | 10 | 17 |
| 2023 | 13 | 16 |
| 2024 | 9 | 9 |
| 2025 | 7 | 13 |
| 2026 | 10 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Carbon film integrated into a back end of line process15 Sep 2026US 12,740,332 B2Sky Water Technology Foundry, Inc.
- Methods of forming electronic devices comprising metal oxide materials25 Aug 2026US 12,721,054 B2Micron Technology, Inc.
- Semiconductor memory device18 Aug 2026US 12,713,841 B2Kioxia Corporation
- Phase change heterostructure, and phase change memory device including the same21 Jul 2026US 12,690,396 B2Samsung Electronics Co., Ltd.
- Synaptic device, reservoir computing device including the synaptic device, and reservoir computing method using the computing device14 Jul 2026US 12,685,035 B2Korea Advanced Institute of Science and Technology
- Semiconductor device and method for fabricating the same21 May 2026US 2026/0143719 A1SK hynix Inc.
- Phase change material device using a sidewall liner and methods for forming the same16 Apr 2026US 2026/0107699 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Two-terminal mixed-ionic-electronic-conduction random access memory (miecram) device26 Mar 2026US 2026/0090291 A1International Business Machines Corporation
- Resistive memory devices using a carbon-based conductor line and methods for forming the same9 Oct 2025US 2025/0318449 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device with switching characteristics and method of operation thereof28 Aug 2025US 2025/0275492 A1Intelligent HW, Inc.
Most cited
By later US patents
- Programmable cell for use in programmable electronic arrays343US 4,599,705 AEnergy Conversion Devices, Inc. · 1986
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Memories with cylindrical read/write stacks185US 9,227,456 B2SanDisk 3D LLC · 2016
- Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof159US 8,824,183 B2SanDisk 3D LLC · 2014
- Cross point memory cell with distributed diodes and method of making same100US 7,733,685 B2SanDisk 3D LLC · 2010