Semiconductor device and method for fabricating the same

Abstract

A semiconductor device and a method for making the semiconductor device, the semiconductor device comprising a plurality of memory cells, each of the memory cells including: a first electrode layer; a memory layer; and a selector layer suitable for selecting the memory layer that is formed in an upper or lower portion of the memory layer and over the first electrode layer, wherein the selector layer includes a dielectric material layer that is doped with a first dopant, and wherein a lower portion region in the dielectric material layer of the selector layer which is adjacent to the first electrode layer has a lower dopant concentration than an upper portion region of the dielectric material layer.

Dependencies are inferred from the claim text.