Methods of forming electronic devices comprising metal oxide materials

A method of forming an electronic device, comprising:

• forming stacks of materials comprising one or more chalcogenide materials;
• forming a seal adjacent to the stacks of materials by atomic layer deposition (ALD), the seal comprising a metal oxide or a metal silicate;
• and
• forming a cap on sidewalls and an upper portion of the metal oxide material, the cap extending along an entire length of the sidewalls of the metal oxide material.

A method of forming an electronic device, comprising:

• forming stacks of materials comprising one or more chalcogenide materials;
• forming, by thermal atomic layer deposition (ALD), at least a portion of a seal comprising a metal oxide material adjacent to a first surface of a nitride material, the first surface of the nitride material distal to the stacks of materials and a second surface of the nitride material proximal to the stacks of materials;
• and
• forming a cap on the seal, the cap extending along an entire length of the seal.