Pyroelectric device for a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Hai Li, Kuen-Yi Chen, Yi Ching Ong, Kuo-Ching Huang, Harry Hak Lay Chuang
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Abstract
A pyroelectric generator may be included in the same semiconductor device as a radio frequency (RF) switch (e.g., a phase-change material (PCM) RF switch and/or other types of RF switch). The pyroelectric generator includes a pyroelectric material layer between two electrodes. The pyroelectric generator is configured to scavenge thermal energy that is generated during the operation of the RF switch, and to convert the thermal energy into electrical energy that may be stored and reused.
Claims20
A semiconductor device, comprising:
- a radio frequency (RF) switch in a dielectric layer,
- wherein a portion of the dielectric layer is on a side of the RF switch along a first direction;
- a pyroelectric device in the dielectric layer under the RF switch along a second direction substantially perpendicular to the first direction,
- wherein the pyroelectric device comprises an electrode on a pyroelectric material layer, and
- wherein an end of the electrode is under at least part of the portion of the dielectric layer on the side of the RF switch;
- and
- a plurality of conductive structures that electrically connect the pyroelectric device to a rectifier circuit,
- wherein the plurality of conductive structures comprise a via on the end of the electrode and extending above the electrode along the second direction through the portion of the dielectric layer on the side of the RF switch.
A semiconductor device, comprising:
- a phase change material (PCM) radio frequency (RF) switch in a dielectric layer,
- wherein a portion of the dielectric layer is on a side of the PCM RF switch;
- a pyroelectric device in the dielectric layer below the RF switch,
- wherein the pyroelectric device comprises a top electrode on a pyroelectric material layer, and
- wherein an end of the top electrode overlaps at least part of the portion of the dielectric layer on the side of the PCM RF switch;
- and
- a plurality of conductive structures that electrically connect the pyroelectric device to a rectifier circuit,
- wherein the plurality of conductive structures comprise a via above the end of the top electrode and extending above the top electrode through the portion of the dielectric layer on the side of the PCM RF switch.
A semiconductor device, comprising:
- a first oxide layer;
- a bottom electrode of a pyroelectric device over the first oxide layer;
- a pyroelectric material layer of the pyroelectric device over the bottom electrode;
- a top electrode of the pyroelectric device over the pyroelectric material layer;
- a second oxide layer of a phase change material (PCM) radio frequency (RF) switch over the top electrode of the pyroelectric device;
- a heater of the PCM RF switch in a recess in the second oxide layer;
- a PCM layer of the PCM RF switch over the heater;
- a plurality of contacts of the PCM RF switch at least partially over the PCM layer,
- wherein a portion of the second oxide layer is on a side of the PCM RF switch;
- wherein an end of the top electrode overlaps at least part of the portion of the second oxide layer on the side of the PCM RF switch;
- and
- a plurality of conductive structures that electrically connect the pyroelectric device to a rectifier circuit,
- wherein the plurality of conductive structures comprise a via on the end of the top electrode and extending above the top electrode through the portion of the second oxide layer on the side of the PCM RF switch.
Dependencies are inferred from the claim text.