Dual-dimensional memory junction device and preparation method, performance acquisition method, and application method for dual-dimensional memory junction device

A dual-dimensional memory junction device, comprising a first contact electrode, a doped n-type Si layer, an AgOx charge trapping layer, and a second contact electrode stacked sequentially from bottom to top, wherein, 0.4<x<1.2;

• wherein the doped n-type Si layer has a Fermi energy level lower than a bandgap midline energy level thereof, the AgOx charge trapping layer is combined with the doped n-type Si layer to form a heterojunction transition region, an area of the AgOx charge trapping layer is larger than an area of the second contact electrode;
• the first contact electrode and the second contact electrode are provided for providing ohmic contact and voltage driving;
• the heterojunction transition region is configured for trap ionization and deionization transitions based on the AgOx charge trapping layer, under voltage drive, continuous adjustability and mutual coupling of memory intensity are achieved in two dimensions of photovoltaic responsivity and electrical conductivity, with non-volatility.