H10N 70/821
Device geometry
Official title: {Device geometry}
H10N70/821 (Device geometry) appears on 8,609 US grants and 10,147 published applications in this corpus.
Search patents in H10N- Granted patents
- 8,609
- Published applications
- 10,147
- Assignees
- 705
- Inventors
- 6,677
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 5 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 13 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 9 | 0 |
| 1999 | 8 | 0 |
| 2000 | 14 | 0 |
| 2001 | 12 | 6 |
| 2002 | 22 | 46 |
| 2003 | 51 | 116 |
| 2004 | 86 | 166 |
| 2005 | 100 | 179 |
| 2006 | 130 | 288 |
| 2007 | 129 | 340 |
| 2008 | 178 | 454 |
| 2009 | 212 | 450 |
| 2010 | 408 | 526 |
| 2011 | 467 | 488 |
| 2012 | 431 | 504 |
| 2013 | 540 | 558 |
| 2014 | 622 | 644 |
| 2015 | 637 | 527 |
| 2016 | 568 | 483 |
| 2017 | 472 | 436 |
| 2018 | 402 | 395 |
| 2019 | 446 | 502 |
| 2020 | 525 | 622 |
| 2021 | 484 | 524 |
| 2022 | 397 | 501 |
| 2023 | 361 | 425 |
| 2024 | 319 | 377 |
| 2025 | 347 | 328 |
| 2026 | 173 | 262 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with phase-change material and method for manufacturing thereof6 Oct 2026US 12,757,644 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and a method for manufacturing the same29 Sep 2026US 12,751,019 B2Macronix International Co., Ltd.
- Differential subthreshold read of memory cell pair in a memory device22 Sep 2026US 12,744,083 B2Micron Technology, Inc.
- Semiconductor device, memory cell and method of forming the same22 Sep 2026US 12,745,574 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material switch with reduced insertion loss and methods for forming the same15 Sep 2026US 12,740,335 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314271 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- Semiconductor device and method of manufacturing semiconductor device1 Oct 2026US 2026/0304785 A1SK hynix Inc.
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304787 A1United Microelectronics Corp.
- Semiconductor device1 Oct 2026US 2026/0304788 A1SK hynix Inc.
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994
- Method of making chalogenide memory device490US 5,789,277 AMicron Technology, Inc. · 1998