H10N 70/826
Adapted for essentially vertical current flow
Official title: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
H10N70/826 (Adapted for essentially vertical current flow) appears on 7,461 US grants and 8,797 published applications in this corpus.
Search patents in H10N- Granted patents
- 7,461
- Published applications
- 8,797
- Assignees
- 626
- Inventors
- 5,954
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 5 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 12 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 9 | 0 |
| 1999 | 8 | 0 |
| 2000 | 14 | 0 |
| 2001 | 12 | 5 |
| 2002 | 22 | 46 |
| 2003 | 48 | 108 |
| 2004 | 79 | 140 |
| 2005 | 90 | 168 |
| 2006 | 114 | 261 |
| 2007 | 120 | 294 |
| 2008 | 157 | 401 |
| 2009 | 182 | 410 |
| 2010 | 363 | 466 |
| 2011 | 412 | 448 |
| 2012 | 382 | 456 |
| 2013 | 493 | 496 |
| 2014 | 557 | 576 |
| 2015 | 573 | 461 |
| 2016 | 472 | 411 |
| 2017 | 400 | 380 |
| 2018 | 348 | 334 |
| 2019 | 376 | 428 |
| 2020 | 431 | 521 |
| 2021 | 408 | 444 |
| 2022 | 345 | 423 |
| 2023 | 305 | 344 |
| 2024 | 269 | 292 |
| 2025 | 282 | 260 |
| 2026 | 135 | 224 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and a method for manufacturing the same29 Sep 2026US 12,751,019 B2Macronix International Co., Ltd.
- Differential subthreshold read of memory cell pair in a memory device22 Sep 2026US 12,744,083 B2Micron Technology, Inc.
- Semiconductor device, memory cell and method of forming the same22 Sep 2026US 12,745,574 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device, memory integrated circuit and manufacturing method thereof15 Sep 2026US 12,740,339 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Random number generation based on threshold voltage randomness15 Sep 2026US 12,740,342 B2Micron Technology, Inc.
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- Semiconductor device and method of manufacturing semiconductor device1 Oct 2026US 2026/0304785 A1SK hynix Inc.
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304787 A1United Microelectronics Corp.
- Semiconductor device1 Oct 2026US 2026/0304788 A1SK hynix Inc.
- Bottom electrode structure in memory device1 Oct 2026US 2026/0305185 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994
- Method of making chalogenide memory device490US 5,789,277 AMicron Technology, Inc. · 1998