Semiconductor device, memory cell and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung-Ying Lee, Bo-Jiun Lin, Shao-Ming Yu, Yu-Chao Lin
Life of this patent
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Abstract
A memory cell includes a memory device, a connecting structure, an insulating layer and a selector. The connecting structure is disposed on and electrically connected to the memory device. The insulating layer covers the memory device and the connecting structure. The selector is located on and electrically connected to the memory device, where the selector is disposed on the insulating layer and connected to the connecting structure by penetrating through the insulating layer.
Claims17
A memory cell, comprising:
- a memory device;
- a connecting structure, disposed over and in contact with the memory device;
- and
- a selector, disposed over and electrically coupled to the memory device, wherein the selector stands on the connecting structure, wherein the selector penetrates an insulating layer by locating in a recess formed in the insulating layer, and the recess exposes the connecting structure,
- wherein an included angle is between the selector lied at a sidewall of the recess and the connecting structure covered by the insulating layer, and the included angle approximately ranging from 30° to 75°,
- wherein the insulating layer covers the memory device and the connecting structure, and the selector is at least partially disposed over the insulating layer.
A semiconductor device, comprising:
- a first interconnect structure;
- a memory cell, disposed over and electrically coupled to the first interconnect structure, wherein the memory cell comprises:
- a memory device;
- a connecting structure, disposed over and in contact with the memory device;
- a selector, disposed over and electrically coupled to the memory device, wherein the selector is extended over and coupled to the connecting structure,
- an insulating layer, covering the memory device and the connecting structure, wherein the selector penetrates the insulating layer by locating in a recess formed in the insulating layer, and the recess exposes the connecting structure,
- wherein an included angle is between the selector lied at a sidewall of the recess and the connecting structure covered by the insulating layer, and the included angle approximately ranging from 30° to 75°;
- and
- a second interconnect structure, disposed over the memory cell and electrically coupled to the selector, wherein the memory cell is between the first interconnect structure and the second interconnect structure.
A method of manufacturing a memory cell, comprising:
- forming a memory device and a connecting structure disposed on the memory device;
- encapsulating the connecting structure and the memory device in a first insulating layer;
- patterning the first insulating layer to form a first recess exposing the connecting structure;
- disposing a selector material over the first insulating layer and the connecting structure, the selector material extending into the first recess so to extend over and connect to the connecting structure;
- and
- patterning the selector material to form a selector being in contact with the connecting structure so as to form the selector disposed over and electrically coupled to the memory device, wherein a cross section of the selector located in the first recess is formed in a form of a V-shape along a stacking direction of the memory device and the selector.
Dependencies are inferred from the claim text.