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US 2026/0304787 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorHui-Lin Wang
Life of this patent
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Abstract
A method for fabricating resistive random access memory (RRAM) device includes the steps of first forming an interlayer dielectric (ILD) layer on a substrate, forming a contact plug in the ILD layer, forming a RRAM on the contact plug, forming a first cap layer and a second cap layer on the RRAM, and removing part of the second cap layer to form a spacer.
Claims17
A method for fabricating resistive random access memory (RRAM) device, comprising:
- forming an interlayer dielectric (ILD) layer on a substrate;
- forming a contact plug in the ILD layer;
- forming a RRAM on the contact plug;
- forming a first cap layer and a second cap layer on the RRAM;
- and
- removing part of the second cap layer to form a spacer.
3 more elements
A resistive random access memory (RRAM) device, comprising:
- an interlayer dielectric (ILD) layer on a substrate;
- a contact plug in the ILD layer;
- a RRAM on the contact plug;
- a cap layer adjacent to the RRAM;
- and
- a spacer adjacent to the cap layer.
3 more elements
Dependencies are inferred from the claim text.