Bottom electrode structure in memory device

An integrated chip, comprising:

• a bottom electrode disposed over a substrate, wherein a lower surface of the bottom electrode comprises a first material having a first electronegativity according to Pauling's scale, the lower surface facing the substrate;
• a metal oxide arranged along an upper surface of the bottom electrode that faces away from the substrate;
• a top electrode arranged over an upper surface of the metal oxide facing away from the substrate;
• and
• a reactivity reducing layer arranged along the lower surface of the bottom electrode, wherein the reactivity reducing layer has a second electronegativity that is greater than the first electronegativity, a difference between the first electronegativity and the second electronegativity being greater than 0.2.

An integrated chip, comprising:

• an interconnect structure disposed over a plurality of transistors, wherein the interconnect structure comprises a plurality of dielectric layers interleaved by a plurality of etch stop layers and the interconnect structure comprises a plurality of metal lines disposed in the plurality of dielectric layers, wherein a thickness of a bottommost one of the plurality of metal lines is less than a thickness of at least one of the plurality of metal lines disposed above the bottommost one of the plurality of metal lines;
• a lower insulating structure arranged over the interconnect structure wherein the lower insulating structure comprises sidewalls forming an opening;
• a bottom electrode structure extending through the opening and comprising a first material having a first electronegativity;
• a data storage layer disposed between the bottom electrode structure and a top electrode;
• and
• a reactivity reducing layer arranged below the lower insulating structure and comprising a second material that contacts the bottom electrode structure, wherein the second material is a different material than the plurality of metal lines and wherein the second material has a second electronegativity that is greater than the first electronegativity according to Pauling's scale.