H10N 70/8265
On sidewalls of dielectric structures
Official title: {on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices}
H10N70/8265 (On sidewalls of dielectric structures) appears on 547 US grants and 666 published applications in this corpus.
Search patents in H10N- Granted patents
- 547
- Published applications
- 666
- Assignees
- 131
- Inventors
- 820
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 2 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 4 |
| 2003 | 5 | 10 |
| 2004 | 5 | 8 |
| 2005 | 3 | 6 |
| 2006 | 7 | 8 |
| 2007 | 2 | 13 |
| 2008 | 9 | 35 |
| 2009 | 15 | 33 |
| 2010 | 28 | 24 |
| 2011 | 21 | 35 |
| 2012 | 21 | 16 |
| 2013 | 28 | 26 |
| 2014 | 29 | 45 |
| 2015 | 46 | 39 |
| 2016 | 47 | 36 |
| 2017 | 33 | 35 |
| 2018 | 22 | 20 |
| 2019 | 32 | 31 |
| 2020 | 24 | 28 |
| 2021 | 30 | 37 |
| 2022 | 21 | 44 |
| 2023 | 33 | 40 |
| 2024 | 38 | 32 |
| 2025 | 30 | 32 |
| 2026 | 13 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Resistive random-access memory device with step height difference19 May 2026US 12,635,426 B2International Business Machines Corporation
- Variable resistance memory device5 May 2026US 12,621,999 B2Samsung Electronics Co., Ltd.
- Resistive switching device and fabrication method thereof5 May 2026US 12,622,184 B2United Microelectronics Corp.
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304787 A1United Microelectronics Corp.
- Electronic device comprising a memory circuit based on a phase change material17 Sep 2026US 2026/0282766 A1STMicroelectronics International N. V.
- Highly reliable resistive memory cell and methods of forming the same10 Sep 2026US 2026/0271627 A1APPLIED Materials.Inc.
- Variable resistance memory device20 Aug 2026US 2026/0247629 A1Samsung Electronics Co., Ltd.
- Variable resistive semiconductor memory device having a barrier layer6 Aug 2026US 2026/0231693 A1SK hynix Inc.
Most cited
By later US patents
- Contact structure and memory element incorporating the same477US 6,031,287 AMicron Technology, Inc. · 2000
- Phase change material memory device435US 6,586,761 B2Intel Corporation · 2003
- Multi-level cell resistance random access memory with metal oxides268US 7,697,316 B2Macronix International Co., Ltd. · 2010
- Method of forming a contact structure in a semiconductor device265US 6,440,837 B1Micron Technology, Inc. · 2002
- Spacer chalcogenide memory method and device231US 6,864,503 B2Macronix International Co., Ltd. · 2005